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a 2 MeV(passive) created bythe vacancy defects
irradiating both suspended and supported - on - SiO2 graphene devices with high energy Ga ion beams(passive) were created byThe vacancy defects
loss of one atom from its lattice site(passive) is caused byVacancy defect
thermal annealing and α particles ( 14 ) or electron beam irradiation ( 15(passive) can be created byVacancy defects ,
non - stoichiometric ratio on dielectric properties of ABO3 perovskite(passive) caused byvacancy defects
Frenkel defectcreatea vacancy defect
light species implanted for embrittlement and interstitial defects caused by heavy species implanted to render amorphous portion 34(passive) caused byvacancy defects
This dislocation of ioncreatesvacancy defect
growth or post - treatmentscreatevacancy defects
Si(passive) caused bythe vacancy defects
a significant geometrical imperfection in CNTscausesa significant geometrical imperfection in CNTs
from a missing atom in a lattice positionresultfrom a missing atom in a lattice position
a bandgap opening in metallic SWCNTscan causea bandgap opening in metallic SWCNTs
in local structural changes in the systemresultin local structural changes in the system
difficulties(passive) caused bydifficulties
another type of flaw , in which the removed carbon atom positions itself between two neighbouring sheets , forming an ' interstitialcan also createanother type of flaw , in which the removed carbon atom positions itself between two neighbouring sheets , forming an ' interstitial
brown color in CVD diamonds adversely affect the optical properties of the materialcausebrown color in CVD diamonds adversely affect the optical properties of the material
in the horizontal directioncreatedin the horizontal direction
The dielectric peak(passive) influenced byThe dielectric peak
to an initial geometrical imperfectionleadsto an initial geometrical imperfection
nanotubes from being utilized as torsion springspreventnanotubes from being utilized as torsion springs
from the rapid synthesis processoriginatedfrom the rapid synthesis process
failure strength(passive) caused byfailure strength
in the replacement reactioncreatedin the replacement reaction
to a decrease in the density of the solidleadsto a decrease in the density of the solid
alsoinfluencealso
in decrease of density of substanceresultsin decrease of density of substance
to greatly increasing the currentcan contributeto greatly increasing the current
in graphenecreatedin graphene
to a red - shift in both the pi and sigma spectraleadsto a red - shift in both the pi and sigma spectra
to the formation of multi - shell structures in the nanowire and nanobridgeleadingto the formation of multi - shell structures in the nanowire and nanobridge