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to approximately 1000 � C. in layers not containing In(passive) is setGrowth temperature
to 520 ° C.(passive) was setThe epitaxial growth temperature
to approximately 1000 � C. , for example , for growth of the layers not containing In , namely , n - type AlGaN cladding layer 10 , n - type GaN optical guide layer 11 , p - type GaN optical guide layer 13 , p - type AlGaN cladding layer 14 and p - type GaN contact layer 15(passive) is setGrowth temperature
They will grow quickly between 20c and 50cTo preventgrowth temperature
at 40 ° C for C. tepidum and at 30 ° C for C. limnaeum(passive) was setGrowth temperature
° C. for growth of layers from the undoped GaN layer(passive) is setgrowth temperature
the most important parametersinfluencingsubmersed plant growth
from the very beginning(passive) can be designedGrowth temperature
to 490 ° C.(passive) was setThe epitaxial growth temperature
MBL bindinginfluencedMBL binding
death by freezingpreventingdeath by freezing
in an economic increase due to higher yield and plant nutritionmay resultin an economic increase due to higher yield and plant nutrition
in reduced vegetative growthresultedin reduced vegetative growth
myotube thermal performance independently from differentiation temperatureinfluencedmyotube thermal performance independently from differentiation temperature
concentrating of CO2 in the atmospherecausedconcentrating of CO2 in the atmosphere
the metabolite and phytohormone profileinfluencesthe metabolite and phytohormone profile
This zonation effect(passive) is created byThis zonation effect
more whole gales , hurricanes and extreme rainfallwill provokemore whole gales , hurricanes and extreme rainfall
to nitrogen incorporation into ZnOleadsto nitrogen incorporation into ZnO