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both Sn alloying and straincan leadto a direct band - structure and lasing
Our calculations ... the Fermi levelresultsin larger energy gaps and effective masses especially for the valence band
CORM-2(passive) are influenced byH365 and H394 in the cytosolic gating band structure
the replacement of N atoms with Phosphorus ( P ) atoms in the GaN alloyleadsto significant changes in the band structure including the band gap and effective mass
DEV.HH , DEV.LH and MHH(passive) are set byBand offsets and effective masses
the distinctive spatial distribution of t2 g states ... the interfaceresultsfrom the modified energy sub - band hierarchy and the renormalization of the associated effective band masses
the equilibrium lattice positions of silicon atoms changes the silicon band structure ,causingband splitting , changes in band shape ( and effective mass
to be imposed on Aleadingto a band structure associated with the effective wavenumber
an absorption layercausingband - to - band absorption in the laminated structure
strategiesleadto effective and efficient band rehearsals at the junior high level
in enhanced carrier transport in the strained - silicon layer that is used as the channel of the MOSFETresultin enhanced carrier transport in the strained - silicon layer that is used as the channel of the MOSFET
in their increased or decreased concentration and mobilityresultin their increased or decreased concentration and mobility
in high mobilityresultingin high mobility
quantum - well systems(passive) caused byquantum - well systems
the effect(passive) caused bythe effect
The fundamental maximum with an energy of 1.45 eV(passive) is caused byThe fundamental maximum with an energy of 1.45 eV
to the latterleadsto the latter
an intense crescendo of a punk tuneto createan intense crescendo of a punk tune
to the defining of the concept of a physical channelleadto the defining of the concept of a physical channel
largeto createlarge