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a purposedesigned' silicon ' one
dynamics in the broader semiconductor(passive) is influenced bySilicon ONE
of light elements , silicon ( Si ) and carbon ( C(passive) is composedSilicon carbide
for stone , terrazzo , ceramic and non - ferrous metal(passive) is designedSilicon carbide
The high solubility of carbon and silicon in ironwould causesilicon carbide
semiconductor deviceswere inventedsilicon ( Si
of tetrahedra of carbon and silicon atoms(passive) is composedSilicon carbide
of tetrahedra of carbon and silicon(passive) is composedSilicon carbide
of carbon and silicon atoms forming a strong bond(passive) is composedSilicon carbide
of tetrahedra of carbon and silicon atoms with strong(passive) is composedSilicon carbide
for stone , terrazzo , ceramic and nonferrous metal stock removal(passive) is designedSilicon carbide
by the Nobel Prize - winning chemist Dr. Henri Moissan(passive) was ... discoveredsilicon carbide
of light elements(passive) is composedSilicon carbide
first(passive) was ... discoveredSilicon Carbide
temperature independent switching characteristics , and excellent thermal performancesetssilicon carbide
an American scientistdiscoverSilicon Carbide
synthetic diamondsinventedsilicon carbide
in 1893(passive) was discoveredSilicon carbide
of manganese , silicon , iron and other elements(passive) is composedSilicon manganese
of alternating layers of carbon ( gray ) and silicon ( blue ) atoms(passive) is composedSilicon carbide
the American inventor Dr. Edward G. Acheson(passive) was discovered by Silicon carbide
accidentally(passive) was ... inventedSilicon Carbide
1891(passive) was discoveredSilicon carbide
for harder materials including plastic and metal(passive) is designedSilicon carbide
Our VLSI teamhas been designingsilicon backplanes
American chemist Edward Acheson ( Edward Acheson ) , who was trying to produce synthetic(passive) was discovered bySilicon carbide
American inventor Edward G. Achesondiscoveredsilicon carbide
the American inventor Edward G. Acheson(passive) was discovered by Silicon carbide
the American inventor Edward G. Acheson(passive) was discovered bySilicon carbide
< p > American inventor Edward G. Achesondiscoveredsilicon carbide
Silicon Carbide Ceramic - In 1891 , it was a eureka moment for Edward Goodrich AchesondiscoveredSilicon Carbide
All About Silicon Carbide Ceramic - In 1891 , it was a eureka moment for Edward Goodrich AchesondiscoveredSilicon Carbide
for manufacture of semiconductor devices for power electronics(passive) is designedNTD silicon
In 1891 , it was a eureka moment for Edward Goodrich AchesondiscoveredSilicon Carbide
of metal silicon slag powder(passive) is composedSilicon briquette
temperatureinfluencedeutectic silicon
This labinventedsilicon photonics
This week , Intel announcedwould be designing802.16 silicon
of many smaller silicon grains of varied crystallographic orientation(passive) is composedPolycrystalline silicon
by the silicon wafer or surface contamination(passive) caused bysilicon
in Meteor Craterdiscoveredin Meteor Crater
Silicon and CarboncontributesSilicon and Carbon
in a wide range of finishes and applicationsresultingin a wide range of finishes and applications
firstdiscoveredfirst
only of coarse particlescomposedonly of coarse particles
CancerCan CauseCancer
on top of the dseton top of the d
in 1891first discoveredin 1891
in 1891discoveredin 1891
as a single electrode ... its thermal conductivity is betteris ... designedas a single electrode ... its thermal conductivity is better
in MEMs based pressure sensor solutionsleadsin MEMs based pressure sensor solutions
pneumoconiosiscan causepneumoconiosis
in Canyon Diablodiscoveredin Canyon Diablo
for these particular pumps and intensive usespecifically designedfor these particular pumps and intensive use
for general purpose rectifier applicationsdesignedfor general purpose rectifier applications
when in contact with the skin and the eyescauseswhen in contact with the skin and the eyes
to the observed virucidal effectcontributeto the observed virucidal effect
to be eco - friendly , safe , and easy to usedesignedto be eco - friendly , safe , and easy to use
in the formation of an amorphous silica - rich layer at the glass / solution interfaceresultsin the formation of an amorphous silica - rich layer at the glass / solution interface
for additional sensitivity in the X - Ray region of the electromagnetic spectrum without use of any scintillator crystals or screensdesignedfor additional sensitivity in the X - Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens
within the silica windows of the growth chamber or from your silicon substrateoriginatingwithin the silica windows of the growth chamber or from your silicon substrate
within the silica windows of the growth chamber or in the silicon substrateoriginatingwithin the silica windows of the growth chamber or in the silicon substrate
within the silica windows of the growth chamber or within the silicon substrateoriginatingwithin the silica windows of the growth chamber or within the silicon substrate
from the silica windows of the growth chamber or within the silicon substrateoriginatingfrom the silica windows of the growth chamber or within the silicon substrate
through the silica windows of the growth chamber or within the silicon substrateoriginatingthrough the silica windows of the growth chamber or within the silicon substrate
from your silica windows of the growth chamber or within the silicon substrateoriginatingfrom your silica windows of the growth chamber or within the silicon substrate
to an M.S. degree in 2008leadingto an M.S. degree in 2008
in the mid - nineteenth centurywas discoveredin the mid - nineteenth century
from the silica windows of the growth chamber or from the silicon substrateoriginatingfrom the silica windows of the growth chamber or from the silicon substrate
through the silica windows of the growth chamber or with the silicon substrateoriginatingthrough the silica windows of the growth chamber or with the silicon substrate
from your silica windows of the growth chamber or from the silicon substrateoriginatingfrom your silica windows of the growth chamber or from the silicon substrate
with the silica windows of the growth chamber or from the silicon substrateoriginatingwith the silica windows of the growth chamber or from the silicon substrate
from your silica windows of the growth chamber or from your silicon substrateoriginatingfrom your silica windows of the growth chamber or from your silicon substrate
from the silica windows of the growth chamber or in the silicon substrateoriginatingfrom the silica windows of the growth chamber or in the silicon substrate
with the silica windows of the growth chamber or through the silicon substrateoriginatingwith the silica windows of the growth chamber or through the silicon substrate
the oxide semiconductor layermay ... influencethe oxide semiconductor layer
in a positive type silicon semiconductorresultsin a positive type silicon semiconductor
with the silica windows of The expansion chamber or within the silicon substrateoriginatingwith the silica windows of The expansion chamber or within the silicon substrate
within the silica windows of The expansion chamber or with the silicon substrateoriginatingwithin the silica windows of The expansion chamber or with the silicon substrate
in the silica windows of The expansion chamber or within the silicon substrateoriginatingin the silica windows of The expansion chamber or within the silicon substrate