Loading ...
The ions move away from or towards the source , according to their chargeresultingin a polarization of the cell
the resting potential of the negative ions in the cell body and the positive ones on the outside ( of the cell(passive) created byPolarization in the cell
H+ flowcausespolarization/ depolarization within cell
formation of bubbles of hydrogen gas clinging to the carbon electrode(passive) is caused byPolarization in a cell
a signaling cascade similar to thatresultsin polarization of the cell
The hydrogen liberated tendsto causepolarization of the cell
the separation of electric carriers at the insulating bi - layer of the cell membranecausespolarization of the cell
a variety of immunosuppressive factorsinfluencemacrophage polarization , dendritic cell
pharmacological inhibition of actin or myosinpreventedpolarization by cell shape
to protect personnel and equipment from electrical disturbances Polarization Cell(passive) is designedPolarization Cell
switched or detected by applying appropriate voltages to the electrodes ( E1;E2 ... andcan be setswitched or detected by applying appropriate voltages to the electrodes ( E1;E2 ... and
to discharge the induced AC voltage on the pipelines Product Refdesignedto discharge the induced AC voltage on the pipelines Product Ref
to a localized regulation of cellular components and therefore to their asymmetric organizationleadsto a localized regulation of cellular components and therefore to their asymmetric organization
the polarization of a nearby cellsetsthe polarization of a nearby cell
the polarization of the other ... again by Coulomb interactioninfluencesthe polarization of the other ... again by Coulomb interaction
switched or detected...http://www.google.com/patents/US6734478?utm_source=gb-gplus-sharePatent US6734478 - Ferroelectric memory circuit and method for its fabricationAdvanced Patent SearchTry the new Google Patents ... with machine - classified Google Scholar results , and Japanese and South Korean patentscan be setswitched or detected...http://www.google.com/patents/US6734478?utm_source=gb-gplus-sharePatent US6734478 - Ferroelectric memory circuit and method for its fabricationAdvanced Patent SearchTry the new Google Patents ... with machine - classified Google Scholar results , and Japanese and South Korean patents
switched or detected...http://www.google.com/patents/US6734478?utm_source=gb-gplus-sharePatent US6734478 - Ferroelectric memory circuit and method for its fabricationAdvanced Patent SearchPublicationcan be setswitched or detected...http://www.google.com/patents/US6734478?utm_source=gb-gplus-sharePatent US6734478 - Ferroelectric memory circuit and method for its fabricationAdvanced Patent SearchPublication
the initial steps in directed endothelial cell migrationprovokingthe initial steps in directed endothelial cell migration
from the simple ingredients of bistability induced by a positive local feedback loop in a signaling network and global control induced by shuttling of enzymes between the cytosol and the membranemay resultfrom the simple ingredients of bistability induced by a positive local feedback loop in a signaling network and global control induced by shuttling of enzymes between the cytosol and the membrane