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This type of electronic structure thus can be used as a target featureto ... discoverhigh mobility 2D semiconductors
Nabsyshas designedsemiconductor - based nanodetectors
whatever their environmenthas been ... designedsemi - mobility in mind
The temperature of the susceptormay also influencethe mobility of the semiconductor film
a worldleadingfabless semiconductor company
to have a potential difference applied between the substrate(passive) being designedsemiconductor device
saidis designedsemiconductor device
from which saidis composedsemiconductor device
to emit light(passive) has been ... designedsemiconductor device
by John Bardeen(passive) invented bysemiconductor device
by high - energy particles(passive) caused bysemiconductor device
high - energy particles(passive) caused bysemiconductor device
by an elevated temperature ( i.e. , undesirable expansion of impurity doped regions formed in the semiconductor substrate ; crystalline defects of the semiconductor substrate caused by thermal stress(passive) caused bysemiconductor device
by John Bardeen , Walter Brat- tain(passive) invented bysemiconductor device
John Bardeen , Walter Brat- tain(passive) invented bysemiconductor device ,
of a microprocessor unit , a semiconductor device , a memory controller , and a plurality of memories(passive) are composedsemiconductor devices
to emit one electron at a time(passive) are designedsemiconductor devices
engineersdesignsemiconductor devices
static starting devices(passive) are designedsemiconductor devices
conditionscausingpower semiconductor
to conditionscausingpower semiconductor
Shockley , Bardeen , and Brattainhad inventedsemiconductor - based transistors
currently(passive) are ... being designedSemiconductor devices
more recently(passive) are ... being designedSemiconductor devices
on the basis of minute design rules(passive) are designedsemiconductor devices
of a plurality of memories(passive) are composedsemiconductor devices
by ever finer structures of devices and interconnects(passive) caused bysemiconductor devices
to continue Moore 's Law(passive) look setSemiconductor devices
Design considerations ... , velocity saturation is an important design characteristicdesigningsemiconductor devices
by a weak magnetic field(passive) influenced bysemiconductor resistance
by charge - charge interactions , PHYSICAL REVIEW B(passive) caused bycarrier mobility in semiconductors
radioactive , cosmic ray or X - ray(passive) can be influenced bySemiconductor devices
to control contaminants including toxic gasses and static , particulate , ammonia , and amine(passive) are designedSemiconductor cleanrooms
These impuritiesactually causethe semiconductor to function
a worldleadingfabless semiconductor Brojing
ST - Ericssondesignsmobile semiconductors
Free download designingledbacklights freescale semiconductor
By your reasoning , we still should n't be using QMto designsemiconductor electronics
Improvements in manufacturing and assembly of novel devices such as the carbon nanotube ( CNT ) andhas ledsemiconductor nanowires
the layercomposedof the porous semiconductor
in a change in the electrical resistanceresultingin a change in the electrical resistance
to device failuremay leadto device failure
forth hereinsetforth herein
to work in the reverse breakdown regionspecially designedto work in the reverse breakdown region
for producing light made todaydesignedfor producing light made today
for the corresponding slotdesignedfor the corresponding slot
as an integrated circuitdesignedas an integrated circuit
to protect a circuit from voltage and current transientsdesignedto protect a circuit from voltage and current transients
in claim 1setin claim 1
of plural semiconductor chips and coupling means which couple the semiconductor chips togethercomposedof plural semiconductor chips and coupling means which couple the semiconductor chips together
as an integrated circuit Publication datedesignedas an integrated circuit Publication date
of a PN junction consisting ofis composedof a PN junction consisting of
to be used in consumer and computer applicationsdesignedto be used in consumer and computer applications
to handle high voltages and currentsdesignedto handle high voltages and currents
in energy and environment region Direct Liquid Cooling IGBT Module for Automotive Applicationscontributingin energy and environment region Direct Liquid Cooling IGBT Module for Automotive Applications
for usebeing designedfor use
for much lower voltages possibledesignedfor much lower voltages possible
for high - power switching applicationsdesignedfor high - power switching applications
to create lightdesignedto create light
so that current is evenly distributed within the device across its internal junctionsmust be designedso that current is evenly distributed within the device across its internal junctions
to provide protection against over voltagedesignedto provide protection against over voltage
Introduction(passive) Why ... were discoveredIntroduction
silicon ( Siwere inventedsilicon ( Si
to allow current to pass in one direction onlydesignedto allow current to pass in one direction only
flicker noise and generation - recombination noisecan also contributeflicker noise and generation - recombination noise
in highly reproducible and linear ohmic contacts and contributed to exceptionally low noiseresultedin highly reproducible and linear ohmic contacts and contributed to exceptionally low noise
in the early 1980?sdiscoveredin the early 1980?s
equipment to suffer repetitive intermittent faults rather than complete failurescausingequipment to suffer repetitive intermittent faults rather than complete failures
Wednesday , September 18 , 2019 resultsWednesday , September 18 , 2019
a new line of wafer sensors - the Airborne Particle Sensor ( APShave designeda new line of wafer sensors - the Airborne Particle Sensor ( APS
for low capacitance operationspecially designedfor low capacitance operation
forth hereinsetforth herein
forth hereinsetforth herein
forth hereinsetforth herein
forth hereinsetforth herein
co -inventedco -
co -inventedco -
to a stronger , fitter athleteleadsto a stronger , fitter athlete
forth hereinsetforth herein
from optically - excited carrier - based changes to the refractive indexresultingfrom optically - excited carrier - based changes to the refractive index