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However , implanting germanium in a substrate results in defects being formedcausesleakage current in the transistor
The transistor allows the microcontroller to detect when USB is plugged in and is also where a mistake was made : I did not connect a resistor between the base and groundto preventleakage current from turning on the transistor
the low voltage peripheral transistors which occurs in standby mode(passive) contributed bytransistor leakage current
lateral growth of the silicide under the sidewall spacercausingincreased transistor leakage current
charge carrierscausea leakage current through the transistor
the non - infinite resistance of the transistor in the turned - off statecausesa leakage current of the transistor
the CMOS logic circuitresultingfrom leakage current across the NMOS transistor
the substantially turned - off PMOS transistor mp1can ... preventa leakage current flowing through the PMOS transistor mp1
Accordingly , when a thermal treatment is performed for subsequent planarization , boron or phosphorus may be diffused into the semiconductor substrate through refractory metal silicide filmthereby causinga leakage current to the transistor
transmitting a data signal from a data line in response to a select signal from a scan lineto effectively preventleakage current from flowing through the switching transistor
the MCU does not output exactly zero voltscausingleakage in the transistor
the parasitic channelcausesincreased transistor leakage current
that maintains a sufficiently high voltage to the well and the gate of pull - up transistor 205to preventleakage current through this transistor
the generation of photocarriers ... in turncausehigh leakage current in the transistor
the crystal temperature(passive) caused bythe undesired transistor leakage current
110(passive) is ... preventedLeakage current through pull - up transistor
Implantation defects(defects in substratecausesthe leakage current in transistor
mechanical stresses in the gate structureinfluencesthe leakage current of the transistor
the charged particles injected by the beam(passive) caused bytransistor leakage current
the droop(passive) caused bythe droop
to high static power consumption that is independent of logic implementation within the FPGAleadto high static power consumption that is independent of logic implementation within the FPGA
0003]The power consumption of a transistor - based device(passive) is highly influenced by0003]The power consumption of a transistor - based device
voltage level(passive) caused byvoltage level
a hold voltage(passive) caused bya hold voltage
more severe problems in dynamic logic circuits than in static logic circuitscausesmore severe problems in dynamic logic circuits than in static logic circuits
performance problems(passive) caused byperformance problems
a rise in bandgap voltage reference output VBGmay causea rise in bandgap voltage reference output VBG
the latch defined by transistors 90 , 120 to self - actuatecould causethe latch defined by transistors 90 , 120 to self - actuate
leakage power(passive) caused byleakage power
The power consumption of a transistor - based system(passive) is highly influenced byThe power consumption of a transistor - based system
an increase in the power consumption and malfunction such as an abnormal output signal(passive) are caused byan increase in the power consumption and malfunction such as an abnormal output signal
luminance signal variation(passive) caused byluminance signal variation
from a sum of sub - threshold leakage current , gate leakage and diode leakage currentresultsfrom a sum of sub - threshold leakage current , gate leakage and diode leakage current
the RF signal(passive) caused bythe RF signal
errors by way of noise added to the two - frame readout correlated double sampling schemewill causeerrors by way of noise added to the two - frame readout correlated double sampling scheme
particularly power loss(passive) caused byparticularly power loss
the bottom output transistor N62(passive) caused bythe bottom output transistor N62
the same - Google Patents Malfunction(passive) caused bythe same - Google Patents Malfunction
the same US 7636412 B2 Malfunction(passive) caused bythe same US 7636412 B2 Malfunction