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the density of crystal defectsto preventcurrent leakage
the crystal defects entrapped in the depletion layer 10(passive) caused byleakage current
the crystal defects in the aforementioned semiconductor device(passive) caused bycurrent leakage
the distribution of crystal defects in a depletion layer(passive) caused byleakage current
Too high Ge concentration ... crystal defectsmay causeleakage current
using floating wellsto preventleakage current US7599232
when it exceeds 30 atomic% , crystal defects are caused in the substrate and the likecausingleakage current
PN junction diodes formed by junction of impurity regions and a well in active areas in a semiconductor device or misalignment of contacts(passive) caused byleakage current
The pn junction or junctionspreventcurrent leakage
PVT variation and defects in a memory cell(passive) caused bycurrent leakage
the effect of giving compression strain to the channel region 14 ... crystal defectsmay causeleakage current
etching an isolation layer , improving the electrical characteristics of a semiconductor device , and improving the yield of a process of manufacturing a semiconductor device(passive) caused byleakage current
In order to prevent the damagecausedbythe leakage current
Further , a diffusion layer 13 is formedto preventcurrent leakage
PVT variationsmay causecurrent leakage
The method includes steps for programming and erasing CMOS memory cellsto preventcurrent leakage
defects in the insulation layer 170(passive) caused bycurrent leakage
change in semiconductor characteristics on the surface of the oxide semiconductor layer 108(passive) caused byleakage current
Moreover , the diffusion layer 13to preventcurrent leakage
a PN junction of a MOS transistor or the like(passive) caused byleakage current
a punch - through phenomenon(passive) caused byleakage current
The lattice defects and small defectscauseleakage current
0011]The gate - tracking circuit controls gate voltage of the first P - type transistor in accordance with a voltage of the I / O padto preventleakage current
0019 ] Gate leakage due to a tunneling effectmay also causeleakage current
a manufacturing defectcausingleakage current
The defect and oxidizationmay causeleakage current
The defect of TFTcausescurrent leakage
a defect in a substrate(passive) caused byleakage current
in order to perform data readout(passive) is thus preventedLeakage current
punch through in the channel region(passive) caused byleakage current
short channel effects in a region near a boundary between a first IGFET active region and a field region when the first IGFET is turned off(passive) caused byleakage current
threading dislocation from the GaN substratemay causecurrent leakage
when electrical equipment is not working correctlycausingleakage current
back - bias voltage to said P - type well region of said selected memory cellsto preventleakage current
PCB contamination(passive) caused byleakage current
external light(passive) caused byleakage current
irradiating light(passive) caused byleakage current
rays of light(passive) caused byan leakage current
Conformal coatings allow higher power and closer track spacingpreventcurrent leakage
timecausescurrent leakage
no standby power consumption(passive) caused byno standby power consumption
electric shock or malfunctionmay causeelectric shock or malfunction
fire and electric shock to humanscausefire and electric shock to humans
undesired power consumptioncausesundesired power consumption
in low power consumptionresultsin low power consumption
the DC power consumption(passive) caused bythe DC power consumption
a small , static power consumption(passive) caused bya small , static power consumption
switch noisecausingswitch noise
pot noisecausingpot noise
a voltage drop of Vg(passive) caused bya voltage drop of Vg
fast operation and power consumption(passive) caused byfast operation and power consumption
to excessive power consumption in these devicesleadsto excessive power consumption in these devices
namely , electric power consumption(passive) caused bynamely , electric power consumption
an increase in power consumption , which is unfavorablecausesan increase in power consumption , which is unfavorable
de creased power consumption(passive) caused byde creased power consumption
P quadratically Static power consumption(passive) caused byP quadratically Static power consumption
idle , thereby unnecessary power consumption(passive) caused byidle , thereby unnecessary power consumption
a voltage drop at the first node(passive) caused bya voltage drop at the first node
to the noise floor during readscontributeto the noise floor during reads
the " noise " in the current reading(passive) caused bythe " noise " in the current reading
noise in the detector networkcreatesnoise in the detector network
leakage power consumption that has no useful purposecreateleakage power consumption that has no useful purpose
in enhanced performance and lower power consumptionresultingin enhanced performance and lower power consumption
y Normally static power dissipation(passive) is caused byy Normally static power dissipation
a voltage drop of V.sub.g(passive) caused bya voltage drop of V.sub.g
a significant component to the power consumption of an integrated circuitcontributesa significant component to the power consumption of an integrated circuit
A larger share of power consumption in modern processors(passive) is caused byA larger share of power consumption in modern processors
increased operating speed and decreased power consumption(passive) caused byincreased operating speed and decreased power consumption
voltage imbalance and power dissipationcan causevoltage imbalance and power dissipation
into unnecessary power dissipationresultsinto unnecessary power dissipation
small amounts of static power dissipationcausesmall amounts of static power dissipation
the 4-input NAND gate circuit and power consumption Pleak(passive) caused bythe 4-input NAND gate circuit and power consumption Pleak
noise problems to the equipments installed near the convertercreatenoise problems to the equipments installed near the converter
a voltage drop ΔV across resistor Rfwill causea voltage drop ΔV across resistor Rf
to severe problems in entire circuit such as excessive power consumption , breakdown , and or short circuitcan leadto severe problems in entire circuit such as excessive power consumption , breakdown , and or short circuit
to increased power consumption in CMOS devices and decreased storage capabilities in DRAM devicesleadto increased power consumption in CMOS devices and decreased storage capabilities in DRAM devices
the power dissipation ratio(passive) caused bythe power dissipation ratio
growing static power dissipation and reduced circuit robustnesscausinggrowing static power dissipation and reduced circuit robustness
the portion of total power consumption of very large scale integration ( VLSI ) circuits(passive) is caused bythe portion of total power consumption of very large scale integration ( VLSI ) circuits
This current imbalance(passive) can be caused byThis current imbalance