ECR : critical electric field in the depletion region Low energy ,causinglattice vibration
light absorptionresultingfrom lattice vibration
annealing treatment led to the reassignment of the disordered selenium particle in the as - depo film(passive) caused bythe lattice vibration
non - radiation recombination(passive) caused bylattice vibration
to low thermal conductivityleadsto low thermal conductivity
geometrical relaxation and electronic spectral change(passive) caused bygeometrical relaxation and electronic spectral change
The high thermal conductivity ( 1000 - 2000 W / m degree K ) of diamond(passive) is caused byThe high thermal conductivity ( 1000 - 2000 W / m degree K ) of diamond
in inelastic phonon - phonon scattering , which effectively suppresses thermal conductivity at high electrical conductivity [ 83resultingin inelastic phonon - phonon scattering , which effectively suppresses thermal conductivity at high electrical conductivity [ 83
i.e. , scattering of electrons in crystal(passive) caused byi.e. , scattering of electrons in crystal
a modulation of the spin - phonon interactioncauseda modulation of the spin - phonon interaction
to extremely high localized temperatures ( > 2,500 ° C ) that can be qualitatively detected by laser - induced fluorescence ( Supplementary Movie 1)19could leadto extremely high localized temperatures ( > 2,500 ° C ) that can be qualitatively detected by laser - induced fluorescence ( Supplementary Movie 1)19
to rise in temperatureleadsto rise in temperature
temporary changes in the lattice parametercausetemporary changes in the lattice parameter
the dipole satisfy the equation mcausingthe dipole satisfy the equation m
oxygen mobility at ambient temperaturesmay triggeroxygen mobility at ambient temperatures
the intrinsic reliability of future computing systemswill setthe intrinsic reliability of future computing systems
to the PTE property rather than the NTE propertycontributeto the PTE property rather than the NTE property
small shifts in energy bandscausesmall shifts in energy bands
the hopping interactionshould influencethe hopping interaction
to a simple linear relationship between the specific heat cpi and temperature for T>150leadto a simple linear relationship between the specific heat cpi and temperature for T>150
other electrons to join that loose electroncauseother electrons to join that loose electron
an indirect fashion by a small amountcan influencean indirect fashion by a small amount
a shift of the phonon frequency in the nm - thick segregated tellurium layercauseda shift of the phonon frequency in the nm - thick segregated tellurium layer
defects in the crystalline materialcreatedefects in the crystalline material
a faor in the crystal field which couples to the electronic moment via the spin - orbit interaction , often making T so short that the resulting ESR -1 line is too broad to observecausea faor in the crystal field which couples to the electronic moment via the spin - orbit interaction , often making T so short that the resulting ESR -1 line is too broad to observe
the ordering tendencies in substitutional alloysinfluencethe ordering tendencies in substitutional alloys
the observed flexibility ... as the structural dynamics in MOFs strongly depends on their terahertz vibrations [ 21 ] , [ 22 ] , [ 23 ] , [ 24triggerthe observed flexibility ... as the structural dynamics in MOFs strongly depends on their terahertz vibrations [ 21 ] , [ 22 ] , [ 23 ] , [ 24
the enthalpies of the Kooi and other structures to rise more quickly with temperature than for the Ferro structure , Fig . 2(fcausethe enthalpies of the Kooi and other structures to rise more quickly with temperature than for the Ferro structure , Fig . 2(f
significantly to the temperature dependence of magnetic anisotropy and should be taken into accountcontributesignificantly to the temperature dependence of magnetic anisotropy and should be taken into account
in increased drift velocityresultingin increased drift velocity
the energy level to change its position in the forbidden energy gapcausethe energy level to change its position in the forbidden energy gap
phonos(passive) caused byphonos
absorption in the far - infraredcausingabsorption in the far - infrared
the attractions and repulsions(passive) caused bythe attractions and repulsions
in creation of acoustic waves that scatter more lightresultsin creation of acoustic waves that scatter more light
from the relative motions between M+ cations and H2 PO− 4 anionsoriginatingfrom the relative motions between M+ cations and H2 PO− 4 anions
spin relaxationcausesspin relaxation
to non - radiative relaxation and decrease efficiencyleadto non - radiative relaxation and decrease efficiency
disturbances(passive) caused bydisturbances
to the generation of higher - order harmonics in the phonon spectrumleadto the generation of higher - order harmonics in the phonon spectrum
EPO in metals ... and simultaneously , EPO drives the collective vibration of free electronscauseEPO in metals ... and simultaneously , EPO drives the collective vibration of free electrons
transient dipoles and these radiate photonscausetransient dipoles and these radiate photons