Loading ...
by the neutron irradiation(passive) caused bythe lattice damage defects
the semiconductor body ... sufficientto causelattice defects in the body
when cold rolling is applied between annealing and subsequent annealingcauseslattice defects to increase
on the other hand(passive) is caused Lattice damage
the ion irradiationcausedlattice damage
the ion implants as well as ability of various annealing procedures to remove this damage(passive) caused bylattice damage
by strain or the presence of impurities(passive) caused byDefects in the iron lattice
strain or the presence of impurities(passive) caused byDefects in the iron lattice
mainly(passive) are causedNumerous lattice defects
by strain or(passive) caused byDefects in the iron lattice
by crystal lattice spacing mismatch(passive) caused bysome crystal lattice defects
crystal lattice spacing mismatch(passive) caused bysome crystal lattice defects
the two lattice domainsresultingfrom lattice - translocation defects
trapsresultingfrom crystal lattice defects
Boundaries between the small and large particlesmay causedefects in the crystal lattice
by equal channel angular pressing increase(passive) caused bycrystal lattice defects
4.1R depletion(passive) caused bymitotic defects
BPA(passive) caused bymitotic defects
mts2(passive) caused bymitotic defects
by cold working(passive) caused bycarbides and lattice defects
expansion and contraction , stress , and improper application of the membrane(passive) are caused bySeam defects
that may play a role in function in microtubule organizationcausesmicrotubule defects
by impurities and C substitution into the MgB2 crystal lattice(passive) caused bylattice defects
impurities and C substitution into the MgB2 crystal lattice(passive) caused bylattice defects
by variations in conditions during crystal growth(passive) caused bylattice defects
by the presence of impurities of either of dopant nature or due to growth conditions [ 22(passive) caused bylattice defects
by impurities and C substitution(passive) caused bylattice defects
by ion irradiation(passive) caused bylattice defects
by the doping process(passive) caused bylattice defects
timeresultingin lattice defects
This stresscan causelattice defects
the result of nuclear interactions , typically scatteringcauselattice defects
by the lattice distortion(passive) caused bylattice defects
plastic deformation(passive) caused bylattice defects
by ion implantation(passive) caused bythe lattice defects
by excessive electron and ion bombardment during film formation(passive) caused bylattice defects
by the laser energy(passive) caused bythe lattice defects
by the presence of impurities of either of dopant nature(passive) caused bylattice defects
by electron beam irradiation(passive) caused bythe lattice defects
by electron beam irradiation(passive) caused bylattice defects
Lattice distortions(passive) are caused byLattice distortions
to the absorption increasecontributingto the absorption increase
recombination of electrons and holes excited by lightcauserecombination of electrons and holes excited by light
recombination of electrons and holes excited by light , which reduces quantum efficiencycauserecombination of electrons and holes excited by light , which reduces quantum efficiency
The luminescence(passive) caused byThe luminescence
The luminescence(passive) caused byThe luminescence
The luminescence(passive) caused byThe luminescence
leakage currents and current collapseto causeleakage currents and current collapse
the electrical behavior of the deviceinfluencesthe electrical behavior of the device
Natural Orange diamonds(passive) are caused byNatural Orange diamonds
red andcausingred and
rapid degradation of such devicescausesrapid degradation of such devices
Red Colors(passive) are caused byRed Colors
Colored Diamonds(passive) are caused byColored Diamonds
Red , Pink & Brown Colors(passive) are caused byRed , Pink & Brown Colors
Red , Pink & Brown Natural Fancy Colored Diamonds(passive) are caused byRed , Pink & Brown Natural Fancy Colored Diamonds
imidazole methemoglobin crystals(passive) caused byimidazole methemoglobin crystals
imidazole methemoglobin crystals(passive) caused byimidazole methemoglobin crystals
from ion implantationresultingfrom ion implantation
from the stone being exposed to immense amounts of stress during its formationhave resultedfrom the stone being exposed to immense amounts of stress during its formation
the strain(passive) caused bythe strain
thus resulting in crystal degradationresultthus resulting in crystal degradation
this is already present and does not have to formcausesthis is already present and does not have to form
in more surface active sitesresultingin more surface active sites
luminescencecausingluminescence
to the device degradationleadingto the device degradation
leakage currentcausingleakage current
scatteringcausingscattering
to changes in physical and mechanical properties and the accumulation of stressesleadingto changes in physical and mechanical properties and the accumulation of stresses
phonon scattering(passive) influenced byphonon scattering
phonon scattering ((passive) influenced byphonon scattering (
dislocations(passive) caused bydislocations
to impairment of autophagyleadingto impairment of autophagy
the distortion(passive) caused bythe distortion
distortions(passive) caused bydistortions
internal strains(passive) caused byinternal strains
internal strains(passive) caused byinternal strains
floor), phonon scattering(passive) influenced byfloor), phonon scattering
in defect states in the forbidden band of siliconresultin defect states in the forbidden band of silicon
generallyleadgenerally