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Ar+ ion implantation(passive) caused bymicroscopic lattice defects
the preceding ion implantation(passive) caused bythe lattice defects
added impurities(passive) created bylattice defects
conventional methods employing ion implantation(passive) caused bylattice defects
Displacement Damage Testing DISPLACEMENT DAMAGE Displacement Damage ... the result of nuclear interactions , typically scatteringcauselattice defects
the ion implantation for forming the shallow well region(passive) caused bylattice defects
ion implantation on the line shapes of M?ssbauer spectra(passive) caused bylattice defects
the ion implantation process steps without causing diffusion of the implanted dopant ions(passive) may be caused byany lattice defects
Cu+ dopingcan ... causelattice defects
pronounced dopingoriginatingfrom lattice defects
the doping process(passive) caused bylattice defects
ISO 17205 Displacement Damage ... the result of nuclear interactions , typically scatteringcauselattice defects
neutron irradiation(passive) caused bylattice defects
the Zr4 + doping effect(passive) caused bythe lattice defects
inter- calation of atoms in the crystal lattice.2000(passive) caused bylattice defects
cyclic superelastic deformation of 16 ms wires(passive) created byLattice defects
the presence of such impurities(passive) caused bylattice defect
electron beam irradiation to the desired value by heat treatment following electron beam irradiation S6(passive) caused bylattice defects
plastic deformation(passive) created bylattice defects
a preceding implantation(passive) caused bylattice defects
oxygen implantation(passive) caused bylattice defects
the first implantation(passive) created bythe lattice defects
the trans isomers ... impuritiescreatedefects in the lattice
the particle beam implantation act as gettering sites for the heavy metal implantation(passive) created byThe lattice defects
superelastic cycling by transmission electron microscopy /(passive) created bylattice defects
superelastic cycling up to 1 , 2 , 5(passive) created byLattice defects
the particle beam implantation act as preferential gettering sites for the heavy metal implantation(passive) created byThe lattice defects
the incident radiation particles(passive) created bylattice defects
impurities and C substitution into the MgB2 crystal lattice(passive) caused bylattice defects
ionized impurities and crystal vibrations(passive) caused bythe lattice defects
said second implantation(passive) created bythe lattice defects
self - irradiation Grimes , Joshua , E - mail(passive) caused bylattice defects
excessive electron and ion bombardment during film formation(passive) caused bylattice defects
Displacement damage ( DD ... the result of nuclear interactions , typically scatteringcauselattice defects
heavy implantation of the conductive regions(passive) caused bylattice defects
in the end - of - range of the proton implantation(passive) are mainly createdThe lattice defects
the reaction mechanism ... so that it is basically impossibleto preventlattice defects
conventional methods employing tion implantation(passive) caused bylattice defects
These particles , indicated by the arrows 48 ... the silicon 46createlattice defects
the ...... crease in the electrical contact between SWCNTs and Si particles in the(passive) created bythe lattice defects
during irradiationcreatedduring irradiation
in a crystal that can best be described in terms of partial internal slipcreatedin a crystal that can best be described in terms of partial internal slip
the inorganic lattice material conversion(passive) caused bythe inorganic lattice material conversion
dislocations(passive) caused bydislocations
an intricate array of new pores and channels causing increased hydrogen uptake.[38can createan intricate array of new pores and channels causing increased hydrogen uptake.[38
an intricate array of new pores and channels causing increased hydrogen uptake.[51can createan intricate array of new pores and channels causing increased hydrogen uptake.[51
in each of the ion implantation processescreatedin each of the ion implantation processes
the Catalytic Activity , Angewandte Chemie , 2000 , 39 , 23Can Influencethe Catalytic Activity , Angewandte Chemie , 2000 , 39 , 23
localized states near the Fermi level , which can give rise to large microwave absorptioncan createlocalized states near the Fermi level , which can give rise to large microwave absorption
localized states near the Fermi level ... 18 ] , which can give rise to large microwave absorptioncan createlocalized states near the Fermi level ... 18 ] , which can give rise to large microwave absorption
during the deformation processcreatedduring the deformation process
the twinning and determine the spatial distribution of twin domainscausethe twinning and determine the spatial distribution of twin domains
from the generation of stressresultingfrom the generation of stress
ferromagnetic order of ZnO nanoparticles by Ni , Cu , Ce ions , Journal of Solid State Chemistry , Volume 246 , February 2017 , Rahul Sharma , R.K. Kotnala , Parveen Sainito influenceferromagnetic order of ZnO nanoparticles by Ni , Cu , Ce ions , Journal of Solid State Chemistry , Volume 246 , February 2017 , Rahul Sharma , R.K. Kotnala , Parveen Saini
the t – m transformation [ 7causethe t – m transformation [ 7
the frequency of occurrence of abnormal discharge(passive) caused bythe frequency of occurrence of abnormal discharge
in the silicon surface layer by boron ion implantationcausedin the silicon surface layer by boron ion implantation
in the implantation processcreatedin the implantation process
a dislocation layer , that is , a layer in which atoms in the crystals are partly defective(passive) is caused bya dislocation layer , that is , a layer in which atoms in the crystals are partly defective
from material itself or coactivator [ 2originatingfrom material itself or coactivator [ 2
in localized trap states ( energy levels within the semiconductor band gapresultin localized trap states ( energy levels within the semiconductor band gap
inorganic crystal material conversion(passive) caused byinorganic crystal material conversion
from nitrogen vacancy centers [ 4,5predominantly originatingfrom nitrogen vacancy centers [ 4,5
from the stone being exposed to immense amounts of stress during its formationhave resultedfrom the stone being exposed to immense amounts of stress during its formation
in the phosphor crystal act as nonradiative recombination centerscreatedin the phosphor crystal act as nonradiative recombination centers
fluorescence quenching ... and then produces soluble metal ( e.g. , cadmium and zinc ) and chalcogenide ( e.g. , sulfur and selenium ) speciescausefluorescence quenching ... and then produces soluble metal ( e.g. , cadmium and zinc ) and chalcogenide ( e.g. , sulfur and selenium ) species
in the vicinity of the Si - SiO2 interface by the surface injury in the sputtering processcausedin the vicinity of the Si - SiO2 interface by the surface injury in the sputtering process
from the stone being exposed to immense amounts of stress during stress 's formationhave resultedfrom the stone being exposed to immense amounts of stress during stress 's formation
in a subsequent III - V semiconductor material layer 4 depositionare provokedin a subsequent III - V semiconductor material layer 4 deposition
during the cyclic superelastic deformation of one selected 16 ms wire at room temperaturecreatedduring the cyclic superelastic deformation of one selected 16 ms wire at room temperature
from misfit interface 38 between the first silicon substrate 32 and the silicon - germanium layer 34resultfrom misfit interface 38 between the first silicon substrate 32 and the silicon - germanium layer 34
in the at least one region of the second conductivity type by the implantation of the impurity ions ( boron ions etccausedin the at least one region of the second conductivity type by the implantation of the impurity ions ( boron ions etc
the absorption edge to broaden to below the band gap and promotes non - radiative recombination , which in turn increases the intrinsic losses in the doped materialcausethe absorption edge to broaden to below the band gap and promotes non - radiative recombination , which in turn increases the intrinsic losses in the doped material
in an increasing in the dielectric loss and grain size and have some effects of piezoelectric propertiesresultsin an increasing in the dielectric loss and grain size and have some effects of piezoelectric properties
a improvement ... but also harm with regard to the required propertiescan causea improvement ... but also harm with regard to the required properties
problems like junction leakage(passive) are caused byproblems like junction leakage
from lattice mismatchresultingfrom lattice mismatch
shifts in the quantum efficiency of the detector at sub - pixel scales , which ca n’t be removed through flat - fieldingcauseshifts in the quantum efficiency of the detector at sub - pixel scales , which ca n’t be removed through flat - fielding
unexpected athermal effects such as enhanced mass transfer or electroplasticitycausingunexpected athermal effects such as enhanced mass transfer or electroplasticity
current leakage and impurity diffusion in the semiconductor devicecausecurrent leakage and impurity diffusion in the semiconductor device