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to apply a defined number of ions to one or more cells in a cell population(passive) originally were designedIon microbeams
to release their 3 " mini resin figure - Two(passive) is setion BadApplezInc
The effectresultsin enhanced ion bombardment
by metal - on - metal ( MoM ) implants(passive) caused byion build - up
by process(passive) caused byintensive ion bombardment
by the work of Ansel Adams(passive) influenced byIon Zupcuwas
ion around the lightning rod(passive) caused byelectrolytic ion beam
the praseodymium doping(passive) caused byion - ion interactions
The smallest kit , ever , fanless + built - in led driverledion beam
an extended region ... the GABA receptor porecan influenceion selectivity
by the electron build - up(passive) caused byion deflections
The lead lining the wallscausesIon to weaken
by the RF plasma during the deposition process(passive) caused byThe ion bombardment
the RF plasma during the deposition process(passive) caused byThe ion bombardment
by ions from an inert gas introduced into the chamber(passive) caused byion bombardment
the properties of a plasmacauseion bombardment
by a plasma(passive) caused byion bombardment
by plasma discharge(passive) caused byion bombardment
by electric discharge between the cathode and the chamber in the presence of gas(passive) caused byion bombardment
the ion densitycontributingto ion bombardment
dyson battery replacement blueledght ion
although I replaced my laser fighters with ion onesdiscoveredIon Cannon
by ions from an inert gas introduced into the chamber and evacuated before step ( b(passive) caused byion bombardment
ions from an inert gas introduced into the chamber and evacuated before step ( b(passive) caused byion bombardment
by a discharge gas(passive) caused byion bombardment
to explaincould influenceion selectivity
ionizing an inert gas in the chamber to form a plasma and electrically directing the ions from said inert gas towards the surface of the substrate(passive) caused byion bombardment
by discharge(passive) caused byion bombardment
by the main discharge(passive) caused byion bombardment
the dc potential(passive) influenced byion permeation
to disable starships(passive) were designedIon cannons
The resulting elevation of cAMPcausesion efflux
compounds from suff ( like saltscould causeion supression
the intravascular compartmentresultingion dieresis
to enable simultaneous sequencing of hundreds of genes , with high reproducibility and rapid turnaround time(passive) is designedIon AmpliSeq
the lattice damage(passive) caused bythe lattice damage
from high electron temperatureresultfrom high electron temperature
to changes in pipetting performancecontributesto changes in pipetting performance
SEEs(passive) caused bySEEs
damagecould still causedamage
plasma damage(passive) caused byplasma damage
damagecauseddamage
damage(passive) caused bydamage
the damage(passive) caused bythe damage
damage to the material being processedcan also causedamage to the material being processed
some of the target material to break off , or sputter , from the targetcausessome of the target material to break off , or sputter , from the target
the sample surface(passive) caused bythe sample surface
the material(passive) caused bythe material
the loss of cathode emission materials , due to evaporation and sputtering(passive) caused bythe loss of cathode emission materials , due to evaporation and sputtering
alsocan ... causealso
alsocausesalso
alsocausesalso
less sputtering(passive) caused byless sputtering
sidewall damage(passive) caused bysidewall damage
over timecan causeover time
the damaged layer(passive) caused bythe damaged layer
energy(passive) caused byenergy
Sputtering(passive) caused bySputtering
sputtering(passive) caused bysputtering
the substrate(passive) caused bythe substrate
the cathode material(passive) caused bythe cathode material
the deposition energy(passive) caused bythe deposition energy
usuallycausedusually
significant erosion(passive) caused bysignificant erosion
significant erosion(passive) caused bysignificant erosion
in the third regionmay have causedin the third region
positive charge buildup on at least a portion of the targetcausespositive charge buildup on at least a portion of the target
the etch rate(passive) are influenced bythe etch rate
from ions extracted out of the residual gas atmosphereresultingfrom ions extracted out of the residual gas atmosphere
silicon(passive) caused bysilicon
in amorphous film growthresultedin amorphous film growth
erosion(passive) caused byerosion
evaporation and sputtering(passive) caused byevaporation and sputtering
seizurescausingseizures
deterioration of the reactorcausesdeterioration of the reactor