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the properties of a plasmacauseion bombardment
the main discharge between the electrodes , which ensures that the means for preventing overheating can be melted faster than the bulb - end glass 5 , 12(passive) caused byion bombardment
# A slight positive biascan prevention bombardment
a high strength ammonia plasmacausingion bombardment
floating potential of plasma according to plasma conditions(passive) caused byion bombardment
In such an embodiment the wafer preferably is negatively biased with respect to the plasmato createion bombardment
the acceleration of the ions across the potential difference between the plasma and the corresponding surface(passive) caused byion bombardment
ionizing an inert gas in the chamber to form a plasma and electrically directing the ions from said inert gas towards the surface of the substrate(passive) caused byion bombardment
ionizing an inert gas in the chamber to form a plasma and electrically directing the ions from said inert gas towards the surface of the 11(passive) caused byion bombardment
positive ions which arrive at the interface plasma / dark sheath and are then accelerated by the negative DC voltage towards the electrode and the wafer placed on this electrode(passive) is caused byIon bombardment
accelerated ions(passive) caused byion bombardment
positive ions which are accelerated by the negative DC voltage towards the LOWER electrode and the wafer placed on this electrode(passive) is caused byIon bombardment
generating electric discharge within a vacuumized airtight container(passive) caused byion bombardment
to limit the loss of reactivity of the ions with control of the ion energyto prevention bombardment
orderto sufficiently causeion bombardment
electrical discharge(passive) caused byion bombardment
microdischarges(passive) caused byIon bombardment
the passage of electric current between the anode and the cathode(passive) caused byion bombardment
Such a power rangecausesion bombardment
the surface discharge(passive) caused byion bombardment
ions from an inert gas introduced into the chamber and evacuated before step ( b(passive) caused byion bombardment
wherein the positive potential is sufficiently highto prevention bombardment
damage to the silicon material(passive) caused byion bombardment
dielectric isolation regions(passive) caused byion bombardment
step ( b. ) uses a gridto prevention bombardment
the discharges(passive) caused byion bombardment
applying a positive potential sufficiently highto prevention bombardment
which was placed 2 mm above the specimen surfaceto prevention bombardment
the intermittent pulse discharge between the electrodes(passive) caused byion bombardment
heat generation of the filaments 8 and the discharge(passive) caused byion bombardment
the application of RF power to the wafer chuck(passive) created byion bombardment
also(passive) has ... been discoveredIon bombardment
physical damage(passive) caused byphysical damage
the surface damage(passive) caused bythe surface damage
damage to the sample surface(passive) caused bydamage to the sample surface
The crystalline damage(passive) caused byThe crystalline damage
crystal damage(passive) caused bycrystal damage
lattice damage(passive) caused bylattice damage
etching damage(passive) caused byetching damage
damage or degradation(passive) caused bydamage or degradation
film damage(passive) caused byfilm damage
film - thickness increase and plasma damage(passive) caused byfilm - thickness increase and plasma damage
no substrate or layer damage(passive) caused byno substrate or layer damage
ion bombardment damage(passive) caused byion bombardment damage
heat - induced damage(passive) caused byheat - induced damage
AUTHOR Semiconductor crystallographic damage(passive) caused byAUTHOR Semiconductor crystallographic damage
in a large damage of the object to be processedresultingin a large damage of the object to be processed
erosion of the sample surface and the emission of secondary ions that are detected by a detector ( quadrupole or magnetic sectorcauseserosion of the sample surface and the emission of secondary ions that are detected by a detector ( quadrupole or magnetic sector
semiconductor crystal lattice defects(passive) caused bysemiconductor crystal lattice defects
The etching mechanisms(passive) can be influenced byThe etching mechanisms
defect densities(passive) created bydefect densities
from the arc dischargeresultingfrom the arc discharge
in amorphous film growthresultedin amorphous film growth
damage more resistant to annealing than does H+ ion bombardment at the same energycreatesdamage more resistant to annealing than does H+ ion bombardment at the same energy
in the enhancement of the compressive stressresultedin the enhancement of the compressive stress
the excessive defect condition(passive) caused bythe excessive defect condition
The loss of cathode emission materials , due to evaporation and sputtering(passive) caused byThe loss of cathode emission materials , due to evaporation and sputtering
the surface sample(passive) caused bythe surface sample
the coating surface(passive) caused bythe coating surface
from the surface dischargecausedfrom the surface discharge
the substrate surface high temperature(passive) caused bythe substrate surface high temperature
significant erosion(passive) caused bysignificant erosion
the structural changes(passive) caused bythe structural changes
tip erosion(passive) caused bytip erosion
the electrode deterioration(passive) caused bythe electrode deterioration
alleviate problems(passive) caused byalleviate problems
The heating and defects(passive) caused byThe heating and defects
the common defects(passive) created ... e.g. ... bythe common defects
sputtering or blistering(passive) caused bysputtering or blistering
less sputtering(passive) caused byless sputtering
a photoresist material(passive) caused bya photoresist material
to surface sputtering and removal of the passive layersleadingto surface sputtering and removal of the passive layers