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Significant research activities have been devotedto createhalf - metal / semiconductor interfaces
We apply the method to the two semiconductor alloys InAs1−xSbx and GaxIn1−xAs combined with a selection of pure metals or with NbTiNto createsemiconductor / superconductor interfaces
As known in the art , conventional device fabrication techniques damage chemical bondscreatingsurface states at semiconductor interfaces
electric field fluctuations in semiconductor space - charge regions at the transport of holes in silicon ( and ions in the electrolyte(passive) caused byelectrolit / semiconductor interfaces
nickel or titanium - based ohmic contacts on Si - face n - type 4H - SiC(passive) created bymetal - semiconductor interface
the remanent polarization field in the switched ferroelectric film(passive) caused bythe semiconductor interface
fluorinated moieties(passive) caused bythe semiconductor - dielectric interface
a Schottky barrier(passive) caused bysemiconductor / metal interface
a magnetic barrier generated by a ferromagnetic strip placed on top of the structure(passive) caused bythe superconductor - semiconductor interface
at least some minority carriersoriginatingat oxide - semiconductor interfaces
an � aiding � electrostatic field to push minority carriers into bulk substrate in U.S. non - provisional patent application Sermay createan � aiding � electrostatic field to push minority carriers into bulk substrate in U.S. non - provisional patent application Ser
spontaneous generation of dark currentcausespontaneous generation of dark current
to enormous potential in the field of applications taking the example of CdS as a host material in different environmentsleadingto enormous potential in the field of applications taking the example of CdS as a host material in different environments
in an increase in the charge mobility of rubrene single - crystal field - effect transistorsresultingin an increase in the charge mobility of rubrene single - crystal field - effect transistors
the resonator properly.38to designthe resonator properly.38
after wet oxidation ( a ) without andresultingafter wet oxidation ( a ) without and
These properties(passive) are caused byThese properties
Dispersion and hysteresis(passive) are caused byDispersion and hysteresis
an depletion layer on the surface of the N - type semiconductorcreatingan depletion layer on the surface of the N - type semiconductor
in the formation of amorphous material close to the interface rich in trapresultsin the formation of amorphous material close to the interface rich in trap