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up to 660 ° Ccausinggrain growth
the process under too high temperaturecan leadto grain growth
high temperature annealing(passive) caused bygrain growth
This high temperature stepcausesgrain growth
materialUS5587326 * Oct 23 , 1992Dec 24 , 1996Nec CorporationForming conductor film including carbon , phosphorus and oxygen additivespreventsgrain growth of polysiliconUS5589694
the grains themselves ... nucleito causegrain growth
the recrystallization temperature ... 100 to 500 ° Cpreventsgrain growth
C. but below that temperature which can cause substantial grain growth ... thatcan causesubstantial grain growth
large crystal grainsresultingfrom grain growth
Above the point of recrystallization , the structural transformation beginsleadingto grain growth
vacuum hot press at a temperature greater than about 1350 � C. but below that temperaturecan causesubstantial grain growth
Such shorter high temperature exposure is importantto preventgrain growth
particles in the grain boundarieswill preventgrain growth
annealing ( recrystallization of alloypreventinggrain growth
which can act as barriers between grainsto preventgrain growth [ 25–28
the baking temperature exceeding 1,850 � C.causesgrowth of grain
the correct annealing temperature ... the carburizing temperature of 950 ° Ccausedgrain growth
on the order of 10 minutespreventinggrain growth
Annealing at and above 600 ° C resulted in coarse ferrite grains with spheroidized coarse carbidescausinggrain growth
also the pressure increaseoriginatingfrom grain growth
the annealing processcausedgrain growth
the calcination process(passive) caused bythe grain growth
After the process , heat is additionally applied to 300 ° C. below for about 30 minto causegrain growth
The slug was heated quickly at the rate of ~130 ° C / minto preventunfavourable grain growth
when the maximum load , 30 MPa , was reached at a temperature of 1000 ° C(passive) was prevented most effectivelyGrain growth
the sintering ... temperaturespreventgrain growth
the weld arc streams(passive) created bygrain growth
heating well above the recrystallization temperatureto causegrain growth
maximum softening ... the recrystallization temperatureto causegrain growth
High temperatures increase the rate of diffusionleadingto grain growth
the average particle size ... grain boundariespreventedgrain growth
continuous two - dimensional grain boundariespreventedgrain growth
Avoid overheating and long soaking since thiscould causegrain growth
Nd ... is dispersed in Ag crystal grainsto preventgrain growth
a hollow structureresultingfrom grain growth
Soak time at the high - temperature phase of the cycle must be carefully controlledto preventgrain growth
Because sintering generally involves temperatures above those necessaryto causegrain growth
At the sintering at high temperature of 1,400 ° C. or higher , a very fine and active WC phase is preferentially melted based on the Ostwald growth on liquid phase sinteringresultingin grain growth
Too high of an austenitizing process temperaturecan resultin grain growth
Thus for high pressure high temperature conditions , either the sintering time or the temperature should be reducedto preventgrain growth
layer 39preventinglayer 39
layer 59preventinglayer 59
the resultant physical and cutting properties to deterioratewould leadthe resultant physical and cutting properties to deteriorate
to creep deformation and contamination failurecan leadto creep deformation and contamination failure
during sintering at high temperaturecan be preventedduring sintering at high temperature
additive...http://www.google.com/patents/US6334964?utm_source=gb-gplus-sharePatent US6334964 - Varistor ink formulationsAdvanced Patent SearchPublication numberUS6334964 B1Publication typeGrantApplication numberUSinfluencingadditive...http://www.google.com/patents/US6334964?utm_source=gb-gplus-sharePatent US6334964 - Varistor ink formulationsAdvanced Patent SearchPublication numberUS6334964 B1Publication typeGrantApplication numberUS
layer 39Apreventinglayer 39A
layer 59Apreventinglayer 59A
the oxide coating and prevents embrittlement(passive) caused bythe oxide coating and prevents embrittlement
the surface to become rough , somewhat like an orange peelcan causethe surface to become rough , somewhat like an orange peel
to unwanted coarse particlesleadingto unwanted coarse particles
to grain refinement of composites thus improving the strengthleadingto grain refinement of composites thus improving the strength
in coarse columnar grain weldsresultingin coarse columnar grain welds
layer into another predetermined configurationpreventinglayer into another predetermined configuration
to inferior wear resistance in grinding mediawill leadto inferior wear resistance in grinding media
roughening of a surface of the silicon - germanium layercan causeroughening of a surface of the silicon - germanium layer
layer on the top face of the first electrodepreventinglayer on the top face of the first electrode
in all sorts of problems with many different foodsresultingin all sorts of problems with many different foods
to the mechanical failure of thermocouple wires through necking down or flattening of the wire near the bead , or open junctionscan contributeto the mechanical failure of thermocouple wires through necking down or flattening of the wire near the bead , or open junctions
the crystallization process from homogenizing the arrangement inherited from the precursor solutionpreventsthe crystallization process from homogenizing the arrangement inherited from the precursor solution
to a condition that enabled liquid flow into the pore Trapped gas in the pores acts to inhibit final densification [ 73ledto a condition that enabled liquid flow into the pore Trapped gas in the pores acts to inhibit final densification [ 73
to problems with cracking , retained austenite , and excessive distortioncan ledto problems with cracking , retained austenite , and excessive distortion
the abnormal growth , the occurrence of pores or the deterioration of the strength of the sintercausesthe abnormal growth , the occurrence of pores or the deterioration of the strength of the sinter
layer on top of the first electrode thereby filling the openingspreventinglayer on top of the first electrode thereby filling the openings
in a smaller grain size for the second polysilicon layer ( 102cresultingin a smaller grain size for the second polysilicon layer ( 102c
to mechanical failure and a negative calibration drift caused by Rhodium diffusion to pure platinum leg as well as from Rhodium volatilizationcan leadto mechanical failure and a negative calibration drift caused by Rhodium diffusion to pure platinum leg as well as from Rhodium volatilization
in the formation of openings or crevices in the ZrB 2 layer as shown in Figresultedin the formation of openings or crevices in the ZrB 2 layer as shown in Fig
to the formation of large pores and the elimination of small pores when the membranes are fired at higher temperatureleadsto the formation of large pores and the elimination of small pores when the membranes are fired at higher temperature
in a fractional decrease in the number of pores and thus in a proportional increase in the pore size [ 6resultin a fractional decrease in the number of pores and thus in a proportional increase in the pore size [ 6
additive selected from the group consisting of antimony oxide , silicon dioxide and titanium dioxideinfluencingadditive selected from the group consisting of antimony oxide , silicon dioxide and titanium dioxide
in a relatively coarse columnar grain structure characterized by sharp boundaries between adjacent crystals and weak inter - crystalline bondingto resultin a relatively coarse columnar grain structure characterized by sharp boundaries between adjacent crystals and weak inter - crystalline bonding
to the biodynamic principle of viewing our farm as an organism and the importance of vegetables , livestock , soil , and grains all contributing as interconnected parts to the whole systemcontributesto the biodynamic principle of viewing our farm as an organism and the importance of vegetables , livestock , soil , and grains all contributing as interconnected parts to the whole system
the environment(passive) caused bythe environment
to the biodynamic principles of viewing our farm as an organism and the importance of vegetables , livestock , soil , and grains all contributing as interconnected parts to the whole systemcontributesto the biodynamic principles of viewing our farm as an organism and the importance of vegetables , livestock , soil , and grains all contributing as interconnected parts to the whole system
in small micro - voids between the grainsalso resultsin small micro - voids between the grains
the gas to be supersaturatedcausesthe gas to be supersaturated
the global warming(passive) caused bythe global warming
greatly to CO2 ... and use of oil for fuels and synthetic fertilizerscontributesgreatly to CO2 ... and use of oil for fuels and synthetic fertilizers
from the effects of strengthening the grain boundaries by the solid solution strengthening and precipitation of carbides at grain boundariesresultingfrom the effects of strengthening the grain boundaries by the solid solution strengthening and precipitation of carbides at grain boundaries
to large grains free of dislocationsleadsto large grains free of dislocations