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a crystal grain boundary(passive) caused bynon - uniformity
Process variationsmay causenon - uniformity
These individual variationscan causenon - uniformity
The negative consequence ... in turncausesnon - uniformity
This responsecan leadnon - uniformity
These inaccuraciescan createnon - uniformity
variation ... 40 %causesspatial non - uniformity
overlap of beam spots(passive) caused bynon - uniformity
the limiting factor ... grain boundariescreatespatial non - uniformity
Figure 6 - Incorrect brightness levelscreatenon - uniformity
the transfer to the recording sheet P ... unstableto causenon - uniformity
previous non - uniform wafer processing steps(passive) created bynon - uniformity
fish , turbulence , or eddy variability(passive) caused bynon - uniformity
the hue becomes partially different in the areato causenon - uniformity
The intensity modulationcausesnon - uniformity
a major factorcausingnon - uniformity
to be of the identical heightto preventnon - uniformity
Areas of the wafer that are locally sparse or densecreatenon - uniformity
the uneven deposition rates(passive) caused bynon - uniformity
This drop off in sensitivity toward the deeper regions of the subjectcausesnon - uniformity
the copy protection(passive) caused bynon - uniformity
In addition , a heat loss from the substrate induced by contacting the gas blocking clamp may be prevented ,thus preventingnon - uniformity
varying velocity in either the page - scan or line - scan direction(passive) may be caused byNon - uniformity
images being obliquely projected onto a screen(passive) caused bynon - uniformity
The use of the alternating electric fieldcausesnon - uniformity
The non - uniform cathode currentcausesnon - uniformity
the variation of the ITO layer(passive) caused bynon - uniformity
Long strings of 0 's or 1 's can occur in a subsequence of less than the maximal sequencecausingnon - uniformity
Such distortioncreatesnon - uniformity
Semiconductor wafermay causenon - uniformity
With regard to product reliability , under a high - temperature and high - humidity environment , or under conditions of rapid change in temperature and/or humidity , a crack is likely to occur in a film due to failure in following shrinkage and/or expansion of a polarizer or other laminated films ,causingnon - uniformity
Significantly , the gouging varies from cell to cellcreatingnon - uniformity
so that the foaming is effected in the HAV vulcanizing furnaceto createnon - uniformity
that a base - year system that does not have periodic adjustments to address market changes is unconstitutionalcreatesnon - uniformity
uniform drying is not attainedthereby causing“ non - uniformity
scattered and reflective light from the substrate - resist interface(passive) caused bylinewidth non - uniformity
The light - diffusion platepreventsnon - uniformity
The larger degree ofcausesnon - uniformity
the drying and film setting - up tendencies of the solution(passive) created bynon - uniformity
The increase in the dispersion of the contact resistance in the substratecausesnon - uniformity
on the surface of the sheet during performing the flake treatment processcausedon the surface of the sheet during performing the flake treatment process
problemscan causeproblems
lack of dimensional control and linewidth variation in the lithographic and etch patterning processes of the gate stacksmay causelack of dimensional control and linewidth variation in the lithographic and etch patterning processes of the gate stacks
a difference in quality of communication made between base stations(passive) is caused bya difference in quality of communication made between base stations
systems and methods , streaks or improper toner density regions(passive) caused bysystems and methods , streaks or improper toner density regions
position errors(passive) caused byposition errors
comparable values of standard deviation(passive) caused bycomparable values of standard deviation
large changes in CR variation throughout the screen making outside scenedetection varying in large rangecausedlarge changes in CR variation throughout the screen making outside scenedetection varying in large range
from differences across the wafer in film thicknesscan resultfrom differences across the wafer in film thickness
Horizontal cross - talk and(passive) were causedHorizontal cross - talk and
to scattering and erodes the optical performance of the liquid crystal displaycontributesto scattering and erodes the optical performance of the liquid crystal display
at low gray scale in panel having distribution in driving Table 7 and Table 8is causedat low gray scale in panel having distribution in driving Table 7 and Table 8
non - planar artifacts on the substrate surfacecausingnon - planar artifacts on the substrate surface
upon grain growth orcausedupon grain growth or
to crosstalkwill leadto crosstalk
from optical axis deviation of the optical axis of the beam emitted from the light sourceresultingfrom optical axis deviation of the optical axis of the beam emitted from the light source
This intensity(passive) is causedThis intensity
the measurement error(passive) caused bythe measurement error
cracks(passive) caused bycracks
of contributions from the filmcomposedof contributions from the film
in raising the temperature in the heating potis causedin raising the temperature in the heating pot