recombination of the carriers of the semiconductor(passive) caused bylight emission
the light - emitting element of each bitcauseslight emission
The recombination of the holes and the electrons in the InGaN active layer 1003causeslight emission
Additionally or alternatively , an output signal from reference light detector 110 can be used as feedback signal for controlling the drive signals applied to light sources 106to causelight emission
The recombination of the electrons and the holes in the base layer 304causeslight emission
exciters formed with holes injected from the anode A and electrons injected from the cathode K.On the other hand(passive) caused bylight emission
exciters formed with holes injected from the anode A and electrons injected from the cathode K. [ 0037(passive) caused bylight emission
The active layer 13causeslight emission
The confined carriers , i.e. , electrons and holes are recombined in the active layer 105thereby causinglight emission
And the power neededto causeemission of light
a chemical or biochemical reaction(passive) caused bylight emission
such sustaining discharge , characters and images(passive) caused bylight emission
Therefore , discharge by gas continuescausinglight emission
a difference in energy levels is createdcausesemission of light
the reset discharge observed on the panel screen(passive) caused bylight emission
real - space transfer of majority electrons into an n - type collecting layer(passive) caused bylight emission
high intensity dischargeledlight emission
Such a mis - discharge phenomenoncauseslight emission
the secondary discharge phenomenacan causelight emission
from the excitation of said sample by one of said spotsresultingfrom the excitation of said sample by one of said spots
from heat ( incandescence ) from the action of chemicals ( chemiluminescenceresultingfrom heat ( incandescence ) from the action of chemicals ( chemiluminescence
from heat ( incandescence ) from the action of chemicals ( chemoluminescenceresultingfrom heat ( incandescence ) from the action of chemicals ( chemoluminescence
from any mechanical action on a solid Triboluminescenceresultingfrom any mechanical action on a solid Triboluminescence
from the excitation decreasesresultingfrom the excitation decreases
release of heat(passive) caused byrelease of heat
step and non - light emission setting step in this ordersettingstep and non - light emission setting step in this order
according to which of a plurality of types of power consumptionsetaccording to which of a plurality of types of power consumption
from heat ( incandescence ) or the action of chemicals ( chemo luminescenceresultsfrom heat ( incandescence ) or the action of chemicals ( chemo luminescence
during decomposition of the resin film during the excimer laser ablation processing and measuring the intensity of the light emissioncausedduring decomposition of the resin film during the excimer laser ablation processing and measuring the intensity of the light emission
The slit width for the excitation light and(passive) was setThe slit width for the excitation light and
from said excitation of the object ( 17resultingfrom said excitation of the object ( 17
heat rather than laser lightcreatedheat rather than laser light
from current injectionresultingfrom current injection
at the step S111setat the step S111
at the step S205setat the step S205
the mood light of the soft atmosphere(passive) caused bythe mood light of the soft atmosphere
from sustaining dischargeresultingfrom sustaining discharge
from being emitted from the vicinity of the point light source on the exit surface ( front surface ) of the diffusion plate 165is preventedfrom being emitted from the vicinity of the point light source on the exit surface ( front surface ) of the diffusion plate 165
from being emitted from the vicinity of the point light source on the exit surface ( front surface ) of the diffusion plate 91is preventedfrom being emitted from the vicinity of the point light source on the exit surface ( front surface ) of the diffusion plate 91
period Tonsettingperiod Ton
from being quenched due to concentration by dispersing a light emitting substance which serves as a guest ... also referred to as a guest substance ) in a light emitting substance which serves as a host ( also referred to as a host substance ) in the light emitting layercan be preventedfrom being quenched due to concentration by dispersing a light emitting substance which serves as a guest ... also referred to as a guest substance ) in a light emitting substance which serves as a host ( also referred to as a host substance ) in the light emitting layer
only in the diaphragm portion 2 and in the vicinity thereof , although the EL sheet is generally characterized in a low power consumptionis causedonly in the diaphragm portion 2 and in the vicinity thereof , although the EL sheet is generally characterized in a low power consumption
in a state where electric current or voltage is applied to display imagescausedin a state where electric current or voltage is applied to display images
from Ca2 + binding to aequorinresultingfrom Ca2 + binding to aequorin
when the set - up discharge is performedcausedwhen the set - up discharge is performed
from electron - hole recombination at an internal junction formed at an interface between the hole - transporting and the electron - transporting thin filmsresultingfrom electron - hole recombination at an internal junction formed at an interface between the hole - transporting and the electron - transporting thin films
from electron - hole recombination at or near the internal junction formed at the interface between the hole - transporting and the electron - transporting thin filmsresultingfrom electron - hole recombination at or near the internal junction formed at the interface between the hole - transporting and the electron - transporting thin films
to a brightness level which is dimmer than a high brightness level or to a low brightness levelsetto a brightness level which is dimmer than a high brightness level or to a low brightness level
a concentration of current at a specific locationpreventinga concentration of current at a specific location
from LLCT with an approximate device configurationoriginatingfrom LLCT with an approximate device configuration
in the projection area of the current diffusion areacan be preventedin the projection area of the current diffusion area
from the recombination of holes and electrons in a semiconductorresultedfrom the recombination of holes and electrons in a semiconductor
by pressing the “ 3 ” button ( step 30settingby pressing the “ 3 ” button ( step 30
from E 1 to E 0leadingfrom E 1 to E 0
from Ca2 + binding to the apoaequorin - coelenterazine complexresultingfrom Ca2 + binding to the apoaequorin - coelenterazine complex
from luciferase activity in the dose response cytotoxicity assay ( Figure 1Cresultingfrom luciferase activity in the dose response cytotoxicity assay ( Figure 1C
when the triplet excitation state returns to the singlet ground state ... in contrast , the light emission caused when the singlet excitation state returns to the singlet ground state is called fluorescencecausedwhen the triplet excitation state returns to the singlet ground state ... in contrast , the light emission caused when the singlet excitation state returns to the singlet ground state is called fluorescence
from radiative recombination of electrons trapped at the donors ( Soriginatingfrom radiative recombination of electrons trapped at the donors ( S
from photosystem II radical pair recombinationoriginatingfrom photosystem II radical pair recombination