Auger recombination and poor injection(passive) caused byEfficiency droop

carrier over flow , non - radiative recombination , Auger recombination , and the like(passive) is caused bythe efficiency droop

the decrease of the ABC coefficient ... triggering space - charge limited drift - loss that makes an electrical potential drop(passive) is caused byefficiency droop

mainly(passive) is ... causedEfficiency droop

carrier spill - over than conventional AlGaN EBLs(passive) possibly caused bythe efficiency droop

As an electric field builds up in the EBL and p - type GaN , electrons are extracted out of the active regionthereby causingthe efficiency droop

carrier - induced strain shift(passive) caused byEfficiency droop

the asymmetry in carrier concentration and mobility , and associated high - level injection phenomenacauseefficiency droop

quantitative agreement with the imbalanced carrier transportcausingthe efficiency droop

The electron leakage is the flow of electrons over the active region to recombine with holes in the p - type GaNcausingefficiency droop

because although a few conventional LEDs have reached this figure , they were running at very low currents and thus low optical outputsto preventefficiency droop

the above - described reasons(passive) caused byefficiency droop

that polarization fields that occur at higher drive currents in the multiple quantum well active region and the electron blockage layer of the LED enhance the leakage of injected electrons into the p - type GaN layercausingthe efficiency droop

Overall ,to causethe efficiency droop

possible solutionsto preventthe efficiency droop

The mechanismcausingefficiency droop

Overcoming nitrideledefficiency droop