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The stress requiredto causedislocation motion
form a cellular structureto preventdislocation movement
the stress which would be necessaryto causedislocation movement
applied shear stress(passive) caused bydislocation motion
Various stress relieving processescan causemovement of dislocations
applied stress in silicon crystals(passive) caused bydislocation motion
Plastic Deformation for crystalline ceramics Ionic bondingpreventsdislocation motion
However , if we are trying to establish a relationship between microstructure and properties , for example , strength , we must consider twin boundariesinfluencedislocation movement
The second phase particles , including the un - dissolved particles during homogenization and the precipitate on the hot deformationpreventedthe movement of dislocation
At later stages , due to greater dislocation interactions , higher stresses are requiredto causedislocation motion
shear stress ... but in the case of SiC diodes , the driving force appears to be intrinsic to the material or to the fault itself(passive) is ... caused byDislocation motion
by applying a simple shear strain to the simulation cell in order to increase the shear stress in a glide plane(passive) is triggeredDislocation motion
the hardness of the material it is necessaryto preventmovement of dislocations
repulsive interactionspreventsdislocation motion
Lateral movement of kinkscausing forwardmovement of a dislocation
the incident wavetriggersdislocation motion
Whilst higher dislocation density and lower grain boundary volume fraction of CG ... helpfulto promptingdislocation motion
the influence of other effectscould causedislocation motion
the motion(passive) caused bydislocation motion
plane ... the crystal lattice structurecausesdislocation movements
image force near surfaces of Pd crystal Hengqiang , Y. , Xiaoguang , N. & Smith , D. , Jun 1992(passive) caused bydislocation motion
a strain fieldpreventsdislocation motion
to form a cell structurepreventingdislocation motion
Boundaries between the grainspreventdislocation movement
solute - dislocation interactions(passive) caused bydislocation motion
The sharpness of the interface and the composition modulation , which would be expectedto strongly influencedislocation motion
Each layer acts as a boundary to the otherto preventdislocation movement
to provide a stable precipitationto preventmovement of dislocations
solute atoms ( size effect(passive) caused bydislocation movement
these interactto preventdislocation movement
the boundary lubrication regionleadingto dislocation movement
the structure of the film / substrate interface(passive) is influenced bydislocation motion
typically(passive) is ... causedDislocation motion
strong ligamentspreventdislocation during movement
increased dislocation densityto preventdislocation movement
the non - localized metallic bond ... littleto preventdislocation motion
a bending work(passive) caused bydislocation movement
This effect ... intermetallic Al - Ce and Al - La phasespreventdislocation movement
the dislocation movement and low temperature annealingto preventdislocation movement
numerous twin boundaries(passive) caused bydislocation motion
bernad Plastic deformation(passive) caused bybernad Plastic deformation
The irreversible plastic deformation(passive) caused byThe irreversible plastic deformation
the embrittlement and hardening that result in material failure.[21preventsthe embrittlement and hardening that result in material failure.[21
extension crystalscausesextension crystals
to the observed plasticity in the nanocrystalline Ni - Fe alloycontributedto the observed plasticity in the nanocrystalline Ni - Fe alloy
to strength characteristics reduction and to rise of deformation - to - failureleadsto strength characteristics reduction and to rise of deformation - to - failure
to inhomogeneous deformation and a decrease in strain hardening rateleadsto inhomogeneous deformation and a decrease in strain hardening rate
to the deformation processes ... while other mechanisms such as GB sliding also probably actcontributesto the deformation processes ... while other mechanisms such as GB sliding also probably act
flow of matter OD201 Optical Dilatometer Technical Specifications Modelcausesflow of matter OD201 Optical Dilatometer Technical Specifications Model
flow of matter Also one must distinguish between densifying and non - densifying mechanismscausesflow of matter Also one must distinguish between densifying and non - densifying mechanisms
creep , which can cause bias shiftscausescreep , which can cause bias shifts
The segregation of Ti on the γ / γ lath interface and the SISF(passive) may be caused byThe segregation of Ti on the γ / γ lath interface and the SISF
to sliding of materials at an angle to the applied stressleadto sliding of materials at an angle to the applied stress
in a stronger but more brittle materialwill resultin a stronger but more brittle material
in enhancement in the applied stress required to move dislocationsresultingin enhancement in the applied stress required to move dislocations
unloading(passive) caused byunloading
vibrationscreatesvibrations
Plastic flow in metals(passive) is caused byPlastic flow in metals
the portion of the atomic structure on one side of the slip plane to be displaced ( to undergo slip ) with respect to the structure on the other side of the slip planecausesthe portion of the atomic structure on one side of the slip plane to be displaced ( to undergo slip ) with respect to the structure on the other side of the slip plane
strain release(passive) caused bystrain release
the shearing process(passive) caused bythe shearing process
in a severe reduction in elongationresultingin a severe reduction in elongation
dγ p(passive) caused bydγ p
in an increase in hardness leading to embrittlementresultingin an increase in hardness leading to embrittlement
to the formation of immobile dislocation segmentsleadsto the formation of immobile dislocation segments
in dimple fractureresultingin dimple fracture
the purely plastic behavior(passive) caused bythe purely plastic behavior
in dense dislocation storage in FCC phasesresultingin dense dislocation storage in FCC phases
in an increase in hardness which results in embrittlementresultingin an increase in hardness which results in embrittlement
from thermal cycling or cyclic stressesresultingfrom thermal cycling or cyclic stresses
higher strengthresultinghigher strength
, by pinning at grain boundariesis prevented, by pinning at grain boundaries
in dislocation pile - ups and internal strainresultingin dislocation pile - ups and internal strain
to effective dislocation accumulations and development of HAGBleadingto effective dislocation accumulations and development of HAGB
embrittlement of the materialcausingembrittlement of the material
the initiation and propagation of shear bands oriented along the direction of maximum shear stressescausingthe initiation and propagation of shear bands oriented along the direction of maximum shear stresses
to the improvement of plasticityleadingto the improvement of plasticity
γ p(passive) caused byγ p
to ductility and rapid crack growthleadsto ductility and rapid crack growth
to increment of material brittlenessleadingto increment of material brittleness