Loading ...
A semiconductor integrated circuit devicecomposedof MOSFETs ( Metal Oxide Semiconductor Field Effect Transistors
an integrated circuit ( ICcomposedof metal oxide semiconductor field effect transistors ( MOSFET
a memorycomposedof MOSFETs ( i.e. , metal - oxide - semiconductor field effect transistors
solid state relayscomposedof MOSFETs ( metal - oxide - semiconductor field - effect transistors
a semiconductor devicemainly composedof MOSFETs ( metal - oxide - semiconductor field effect transistors
The semiconductor integrated circuit 13 is manufactured by complementary metal - oxide semiconductor ( CMOS ) processing , and the FM / AM receiving circuit and serial communication circuit inside itare composedof metal - oxide semiconductor field - effect transistors ( MOSFET
a low - impact self - aligned processto createmetal - oxide semiconductor field - effect transistors ( MOSFETs ) with
all capacitorscomposedof MOSFETs ( Metal Oxide Semiconductor Field Effect Transistors
a transfer gatecomposedof metal oxide semiconductor transistors
Stress from STI regions and stress form nitride capping layerscan greatly influencemetal - oxide - semiconductor field effect transistors ( MOSFETs
0374]Memory cells of the flash memory(passive) are composed0374]Memory cells of the flash memory
for industrial applications to regulate and balance leakage currents while minimizing energy used for balancing supercapacitor cells stacked in series stack of two or moredesignedfor industrial applications to regulate and balance leakage currents while minimizing energy used for balancing supercapacitor cells stacked in series stack of two or more
The MOS transfer gate pairs PT1 through PT6 and inverters INV1 through INV4(passive) are composedThe MOS transfer gate pairs PT1 through PT6 and inverters INV1 through INV4
to excessive current leakage or outright device failureleadingto excessive current leakage or outright device failure
ten times smaller than silicon - based counterpartto be designedten times smaller than silicon - based counterpart
for industrial applications to regulate and balance leakage currents while minimizing energy TDK unveilsdesignedfor industrial applications to regulate and balance leakage currents while minimizing energy TDK unveils
for power conversion applicationsdesignedfor power conversion applications
The Fe - NAND(passive) is composedThe Fe - NAND
of a p - type MISFET and an n - type MISFET , whereinare composedof a p - type MISFET and an n - type MISFET , wherein