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Qaagi - Book of Why

Causes

Effects

of a channel of n - type or p - type semiconductor material(passive) is composeda semiconductor device called metal - oxide - semiconductor field - effect transistor ( MOSFET

By increasing the pull - up resistance , VOH decreases due to the smaller reset or sense currentcausinga smaller voltage drop across the internal metal - oxide semiconductor field - effect transistor ( MOSFET

sodium contamination(passive) caused byinstability issues in silicon metal - oxide - field - effect - transistors ( MOSFETs

Dawon Kahng and Mohamed Atalla at Bell Labsinventedthe metal - oxide - semiconductor field - effect transistor ( MOSFET ) , a semiconductor that is the basic element in most of today 's electronic equipment

by Mohamed M. Atalla and Dawon Kahng(passive) invented byMetal - oxide - semiconductor ( MOS ) logic originates from the MOSFET ( metal - oxide - semiconductor field - effect transistor

exceptional electronic propertiesresultingin a significant increase of the drain current of metal - oxide - semiconductor field - effect transistors ( MOSFETs

Mohamed M. Atalla and Dawon Kahng at Bell Labs(passive) was invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor

Mohamed M. Atalla and Dawon Kahnginventedthe metal - oxide semiconductor field - effect transistor ( MOSFET

by Mohamed M. Atalla and Dawon Kahng(passive) invented bythe metal - oxide - semiconductor field - effect transistor ( MOSFET

Mohamed M. Atalla and Dawon Kahng(passive) was invented byMOSFET ( metal - oxide - semiconductor field - effect transistor

Mohamed M. Atalla and Dawon Kahng(passive) was invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor

Mohamed M. Atalla and Dawon Kahng(passive) is invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor

Egyptian engineer Mohamed M. Atalla and Korean engineer Dawon Kahng(passive) was invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor

Mohamed Atalla and Dawon Kahng at Bell Labs(passive) was invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor

by Mohamed Atalla and Dawon Kahng at Bell Labs(passive) invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor

Dawon Kahng and Mohamed Atalla at Bell Labsinventedthe metal - oxide - semiconductor field - effect transistor ( MOSFET

Dawon Kahng and Martin M. ( John ) Atalla at Bell Labsinventedthe metal oxide semiconductor field - effect transistor ( MOSFET

by Mohamed Atalla and Dawon Kahng(passive) invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor

Mohamed Atalla and Dawon Kahng(passive) was invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor

Mohamed Atalla and Dawon Kahng(passive) was invented byThe metal - oxide - semiconductor field - effect transistor ( MOSFET

Dawon Kahng and Martin Atalla at Bell Labsinventedthe metal oxide semiconductor field - effect transistor ( MOSFET

Dawon Kahng and Martin Atalla(passive) was invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor

A grid field - effect transistor isolated more usually named MOSFET ( English Metal acronym Oxide Semiconductor Field Effect Transistorresultsin field - effect transistor with structure metal - oxide - semiconductor

Dawon KahngInventedthe MOSFET ( metal - oxide - semiconductor field - effect transistor

John ) Atalla at Bell Labsinventedthe metal - oxide - semiconductor field - effect transistor ( MOSFET

Atalla at Bell Labsinventedthe metal oxide semiconductor field effect transistor ( MOSFET

Alex Lidow , a physicist and the Chief Executive Officer of Efficient Power Conversion based in El Segundo , Californiainventedthe silicon based transistor known as MOSFET ( metal - oxide - semiconductor field - efficient transistor

Mohamed M(passive) was invented byMOSFET ( metal - oxide - semiconductor field - effect transistor

Mohamed M.(passive) was invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor

Mohamed M(passive) was invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor

Martin Atalla at Bell Labsinventedthe metal oxide semiconductor field - effect transistor ( MOSFET

ninventedthe MOSFET ( metal - oxide - semiconductor field - effect transistor

Bell Labsinventedthe metal - oxide - semiconductor field - effect transistor ( MOSFET

in 1960inventedthe metal oxide semiconductor field - effect transistor ( MOSFET

in 1960(passive) was inventedThe metal - oxide - semiconductor field - effect transistor ( MOSFET

Egyptian engineer Mohamed M. Atalla and Korean engineer Dawon Kahng(passive) was invented byThe MOSFET ( metal - oxide - semiconductor field - effect

by Mohamed M. Atalla and Dawon Kahng(passive) invented byMetal - oxide - semiconductor field - effect transistor

Mohamed M. Atalla and Dawon Kahnginventedthe metal - oxide semiconductor field - effect transistor

by Mohamed Atalla and Dawon Kahng at Bell Labs(passive) invented bymetal - oxide - semiconductor field - effect transistor

Advances in silicon development in the 1970sledto metal oxide semiconductor field effect transistors ( MOSFET

some timewere inventedsome time

for high - side , load - switching applicationsdesignedfor high - side , load - switching applications

for high side switching , etcdesignedfor high side switching , etc

to handle large amounts of powerdesignedto handle large amounts of power

The circuits(passive) are composedThe circuits

to the production of many compact and efficient devicesledto the production of many compact and efficient devices

specifically for dose measurementsdesignedspecifically for dose measurements

specifically for dose measurements in rapidly changing dose gradientsdesignedspecifically for dose measurements in rapidly changing dose gradients

to handle significant power levelsdesignedto handle significant power levels

to handle significant power levelsdesignedto handle significant power levels

History(passive) was inventedHistory

a connected surface(passive) caused bya connected surface

to handle significant power levelsdesignedto handle significant power levels

The circuits(passive) are designedThe circuits

in 1959inventedin 1959

in each case(passive) can ... be designedin each case

to handle high - power RF signals from devices such as stereo amplifiers , radio transmitters , TV monitors , etcare designedto handle high - power RF signals from devices such as stereo amplifiers , radio transmitters , TV monitors , etc

A kind of transistor level shift circuit(passive) is composedA kind of transistor level shift circuit

to handle large amounts of powerdesignedto handle large amounts of power

to handledesignedto handle

These electronic products(passive) are mostly composedThese electronic products

to handle significant power levelsdesignedto handle significant power levels

to the replacement of SiOhas ledto the replacement of SiO

the switching means(passive) is composedthe switching means

The MOS transfer gate pairs PT1 through PT6 and inverters INV1 through INV4(passive) are composedThe MOS transfer gate pairs PT1 through PT6 and inverters INV1 through INV4

of PMOS and NMOS tran- sistorscomposedof PMOS and NMOS tran- sistors

for INMARSAT applicationsdesignedfor INMARSAT applications

a breakthrough such(passive) when ... was discovereda breakthrough such

to handle significant power levelsdesignedto handle significant power levels

for low resolution images , low power consumptiondesignedfor low resolution images , low power consumption

the defects(passive) to be causedthe defects

electrondiscoveredelectron

for microwavedesignedfor microwave

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