of a channel of n - type or p - type semiconductor material(passive) is composeda semiconductor device called metal - oxide - semiconductor field - effect transistor ( MOSFET
By increasing the pull - up resistance , VOH decreases due to the smaller reset or sense currentcausinga smaller voltage drop across the internal metal - oxide semiconductor field - effect transistor ( MOSFET
sodium contamination(passive) caused byinstability issues in silicon metal - oxide - field - effect - transistors ( MOSFETs
Dawon Kahng and Mohamed Atalla at Bell Labsinventedthe metal - oxide - semiconductor field - effect transistor ( MOSFET ) , a semiconductor that is the basic element in most of today 's electronic equipment
by Mohamed M. Atalla and Dawon Kahng(passive) invented byMetal - oxide - semiconductor ( MOS ) logic originates from the MOSFET ( metal - oxide - semiconductor field - effect transistor
exceptional electronic propertiesresultingin a significant increase of the drain current of metal - oxide - semiconductor field - effect transistors ( MOSFETs
Mohamed M. Atalla and Dawon Kahng at Bell Labs(passive) was invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor
Mohamed M. Atalla and Dawon Kahnginventedthe metal - oxide semiconductor field - effect transistor ( MOSFET
by Mohamed M. Atalla and Dawon Kahng(passive) invented bythe metal - oxide - semiconductor field - effect transistor ( MOSFET
Mohamed M. Atalla and Dawon Kahng(passive) was invented byMOSFET ( metal - oxide - semiconductor field - effect transistor
Mohamed M. Atalla and Dawon Kahng(passive) was invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor
Mohamed M. Atalla and Dawon Kahng(passive) is invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor
Egyptian engineer Mohamed M. Atalla and Korean engineer Dawon Kahng(passive) was invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor
Mohamed Atalla and Dawon Kahng at Bell Labs(passive) was invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor
by Mohamed Atalla and Dawon Kahng at Bell Labs(passive) invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor
Dawon Kahng and Mohamed Atalla at Bell Labsinventedthe metal - oxide - semiconductor field - effect transistor ( MOSFET
Dawon Kahng and Martin M. ( John ) Atalla at Bell Labsinventedthe metal oxide semiconductor field - effect transistor ( MOSFET
by Mohamed Atalla and Dawon Kahng(passive) invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor
Mohamed Atalla and Dawon Kahng(passive) was invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor
Mohamed Atalla and Dawon Kahng(passive) was invented byThe metal - oxide - semiconductor field - effect transistor ( MOSFET
Dawon Kahng and Martin Atalla at Bell Labsinventedthe metal oxide semiconductor field - effect transistor ( MOSFET
Dawon Kahng and Martin Atalla(passive) was invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor
A grid field - effect transistor isolated more usually named MOSFET ( English Metal acronym Oxide Semiconductor Field Effect Transistorresultsin field - effect transistor with structure metal - oxide - semiconductor
Dawon KahngInventedthe MOSFET ( metal - oxide - semiconductor field - effect transistor
John ) Atalla at Bell Labsinventedthe metal - oxide - semiconductor field - effect transistor ( MOSFET
Atalla at Bell Labsinventedthe metal oxide semiconductor field effect transistor ( MOSFET
Alex Lidow , a physicist and the Chief Executive Officer of Efficient Power Conversion based in El Segundo , Californiainventedthe silicon based transistor known as MOSFET ( metal - oxide - semiconductor field - efficient transistor
Mohamed M(passive) was invented byMOSFET ( metal - oxide - semiconductor field - effect transistor
Mohamed M.(passive) was invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor
Mohamed M(passive) was invented byThe MOSFET ( metal - oxide - semiconductor field - effect transistor
Martin Atalla at Bell Labsinventedthe metal oxide semiconductor field - effect transistor ( MOSFET
ninventedthe MOSFET ( metal - oxide - semiconductor field - effect transistor
Bell Labsinventedthe metal - oxide - semiconductor field - effect transistor ( MOSFET
in 1960inventedthe metal oxide semiconductor field - effect transistor ( MOSFET
in 1960(passive) was inventedThe metal - oxide - semiconductor field - effect transistor ( MOSFET
Egyptian engineer Mohamed M. Atalla and Korean engineer Dawon Kahng(passive) was invented byThe MOSFET ( metal - oxide - semiconductor field - effect
by Mohamed M. Atalla and Dawon Kahng(passive) invented byMetal - oxide - semiconductor field - effect transistor
Mohamed M. Atalla and Dawon Kahnginventedthe metal - oxide semiconductor field - effect transistor
by Mohamed Atalla and Dawon Kahng at Bell Labs(passive) invented bymetal - oxide - semiconductor field - effect transistor
Advances in silicon development in the 1970sledto metal oxide semiconductor field effect transistors ( MOSFET
some timewere inventedsome time
for high - side , load - switching applicationsdesignedfor high - side , load - switching applications
for high side switching , etcdesignedfor high side switching , etc
to handle large amounts of powerdesignedto handle large amounts of power
The circuits(passive) are composedThe circuits
to the production of many compact and efficient devicesledto the production of many compact and efficient devices
specifically for dose measurementsdesignedspecifically for dose measurements
specifically for dose measurements in rapidly changing dose gradientsdesignedspecifically for dose measurements in rapidly changing dose gradients
to handle significant power levelsdesignedto handle significant power levels
to handle significant power levelsdesignedto handle significant power levels
History(passive) was inventedHistory
a connected surface(passive) caused bya connected surface
to handle significant power levelsdesignedto handle significant power levels
The circuits(passive) are designedThe circuits
in 1959inventedin 1959
in each case(passive) can ... be designedin each case
to handle high - power RF signals from devices such as stereo amplifiers , radio transmitters , TV monitors , etcare designedto handle high - power RF signals from devices such as stereo amplifiers , radio transmitters , TV monitors , etc
A kind of transistor level shift circuit(passive) is composedA kind of transistor level shift circuit
to handle large amounts of powerdesignedto handle large amounts of power
to handledesignedto handle
These electronic products(passive) are mostly composedThese electronic products
to handle significant power levelsdesignedto handle significant power levels
to the replacement of SiOhas ledto the replacement of SiO
the switching means(passive) is composedthe switching means
The MOS transfer gate pairs PT1 through PT6 and inverters INV1 through INV4(passive) are composedThe MOS transfer gate pairs PT1 through PT6 and inverters INV1 through INV4
of PMOS and NMOS tran- sistorscomposedof PMOS and NMOS tran- sistors
for INMARSAT applicationsdesignedfor INMARSAT applications
a breakthrough such(passive) when ... was discovereda breakthrough such
to handle significant power levelsdesignedto handle significant power levels
for low resolution images , low power consumptiondesignedfor low resolution images , low power consumption