Loading ...
Coupled Film Height and Concentration Fluctuations Thiele , Uwe(passive) Triggered byDewetting
coating a substrateto preventdewetting
the fact that the Sn-8Zn-3Bi solder alloy itself does not have good wetting properties sufficient to maintain the molten solder alloy in a well spread condition and the molten solder alloy is repelled by the parent material ( printed circuit board ) to cause dewetting(passive) is caused byDewetting
the strength of the unfavorable potential neededto triggerdewetting
Higher voltages applied to this fluid or to those previously mentioned would provide a greater electrostatic forceto preventdewetting
2 nm film also needed higher concentration of Compound 1to preventdewetting
unless perhaps some active method ( e.g. electric fields , heating , vibration ) is usedto causedewetting
insufficient solder(passive) caused bydewetting
orderto preventdewetting
correct excessive temperaturecan causedewetting
a capping layer ... annealingto preventdewetting
a surface energycausesdewetting
poor surface finish quality(passive) is commonly caused byDewetting
adhesive ... the boardwill causedewetting
a plate thickness that is too thin(passive) can be caused byDewetting
Another part of the process that helpspreventdewetting
mold release residues on the component bodies(passive) is caused byDewetting
incorporating sufficient particlesto preventdewetting
flux and other soilscan causedewetting
when molten solder coats a surface and then recedes , leaving irregulary - shaped solder deposits separated by areas covered by a thin solder film(passive) is causedDewetting
the 13 selectionsettingdewetting
using nanofillersto preventdewetting
the way the new primers interact with the various and complex materials and chemicals used on the airplane(passive) is caused byDewetting
so that the liquid crystal layer 120 can be easily separated from the stretched film 110 during the transfer of the liquid crystal layer 120preventingdewetting
a local mechanical stimulus , which induces a pressure gradient(passive) triggered bydewetting
mutations enacted in silico to replace three hydrophilic residues at the interface with hydrophobic onescan triggerdewetting
gas(passive) can be caused byDewetting
incorporating sufficient supernumerary particlesto preventdewetting
Factorsinfluencedewetting
the range of oxygen concentrations ... high enoughto preventdewetting
enough surface free energy from your solder maskto preventdewetting
an overview of different heat sources ... that can be usedto causedewetting
The VASP treatmentpreventeddewetting
to provide adequate electrostatic forceto preventdewetting
Can I ask what was the organic portion and did you find any phosphorus at all as too much in the plated goldwill definitely causedewetting
0.03 %can causedewetting
thin plating on HASL boardsCan ... causedewetting
induced dewetting of Ag , as well as for Co ... intrinsic thermocapillary effectsinfluenceddewetting
to incomplete or poor pattern formationthus leadsto incomplete or poor pattern formation
increased pressure dropcan leadincreased pressure drop
the formation of voids and a corresponding increase in propellant volume which can be measured with a dilatometercausesthe formation of voids and a corresponding increase in propellant volume which can be measured with a dilatometer
to a mixture of droplets and puddles making it difficult to study the dynamics of the process or to control the final droplet stateusually leadsto a mixture of droplets and puddles making it difficult to study the dynamics of the process or to control the final droplet state
to incomplete soldered joiningscan thus leadto incomplete soldered joinings
the UV absorbancecausethe UV absorbance
to pore closureleadingto pore closure
high through - thickness gas permeability prepreg for an alternative composite manufacturing processto createhigh through - thickness gas permeability prepreg for an alternative composite manufacturing process
to formation of numerous small drops of fluid on the substratemay leadto formation of numerous small drops of fluid on the substrate
the maximum contact angle(passive) led bythe maximum contact angle
the surface openings(passive) created bythe surface openings
in the contraction of the three - phase lineresultsin the contraction of the three - phase line
thin film rupture(passive) caused bythin film rupture
Self - Assembled and Organized Nanoparticlesto CreateSelf - Assembled and Organized Nanoparticles
to large and polydisperse hole patternsleadsto large and polydisperse hole patterns
issues(passive) caused byissues
SiO2(passive) caused bySiO2
dielectric glass metasurfaces , rather than metallic metasurfacesto createdielectric glass metasurfaces , rather than metallic metasurfaces
to breakup of the continuous Co filmleadsto breakup of the continuous Co film