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I thinkcan ... causecrystal problems
the differencecausescrystal defects , etc
problems in the growth processcausecrystal defects
at the time of crystal growth(passive) are causedcrystal defects
by heat history in the single - crystal growth(passive) caused bycrystal defects
Carbonate substitutioncan causecrystal disorder
by high temperature Crystal defects(passive) caused byCrystal defects
by the changes of internal stress(passive) caused bycrystal defects
This processcausescrystal defects
the semiconductor materialcausingcrystal defects
by wrinkles , creases & uneven areas(passive) caused bywhite imperfections
on the semiconductor substrate surface(passive) may be causedCrystal defects
the factorscausingcrystal defects
by oxygen deficiency(passive) caused bycrystal defects
by internal stress(passive) caused bycrystal defects
by the ion implantation damages(passive) caused bythe crystal defects
at which internal strain is increasedto causecrystal defects
oxygen atoms ... filmwhere ... are causedcrystal defects
by stress(passive) caused byCrystal defects
by the stress(passive) caused bycrystal defects
by such stress(passive) caused bycrystal defects
by stress generated at the boundaries between crystal regions(passive) caused bycrystal defects
by conventional manufacturing methods(passive) caused bycrystal defects
by a stress produced in a thermal step(passive) caused bycrystal defects
by stress concentration(passive) caused bycrystal defects
by a difference in lattice parameters(passive) caused bycrystal defects
by the ion implantation method(passive) can be causedcrystal defects
by the ion irradiation(passive) caused bythe crystal defects
plastic deformationcausingcrystal defects
by the plastic deformation(passive) caused bythe crystal defects
by a difference in the lattice constant(passive) caused bycrystal defects
the stressescausingcrystal defects
by ion implantation to the silicon(passive) caused bycrystal defects
by the power(passive) caused bycrystal defects
the nitrogen atomscausingcrystal defects
the first graphene film with the nitrogen atomscausingcrystal defects
the differencecausescrystal defects
atomic size variationcausingcrystal defects
high doping(passive) can be caused byCrystal defects
by ion implantation(passive) caused bycrystal defects
the popcorn noise when the diode is substantially depletedto causethe popcorn noise when the diode is substantially depleted
rapid degradation of such devicescausesrapid degradation of such devices
Red , Pink & Brown Natural Fancy Colored Diamonds(passive) are caused byRed , Pink & Brown Natural Fancy Colored Diamonds
gold vanity tray setsetgold vanity tray set
at the time of crystal growth or crystal defects formed at the time of processing a wafercausedat the time of crystal growth or crystal defects formed at the time of processing a wafer
each time(passive) is causedeach time
at the time of crystal growthare causedat the time of crystal growth
the strength of the material to be increasedcausethe strength of the material to be increased
to improved material performanceleadto improved material performance
in the single crystal semiconductorcausedin the single crystal semiconductor
from strainresultingfrom strain
at the time of crystal growth existare causedat the time of crystal growth exist
an increase in leak current and a decrease in lifetime of a carriermay causean increase in leak current and a decrease in lifetime of a carrier
the redox properties of model systems and which have to be studied on the microscopic levelcan ... influencethe redox properties of model systems and which have to be studied on the microscopic level
a degradation in electronic propertiescausinga degradation in electronic properties
later due tocausedlater due to
optical propertyinfluencingoptical property
the colour of a structurecausingthe colour of a structure
in a semiconductor bodycausedin a semiconductor body
at a contact surfacecausedat a contact surface
from the migration failureoriginatingfrom the migration failure
from the stressresultingfrom the stress
in the substrate where a depletion layer is to be formedcausedin the substrate where a depletion layer is to be formed
to a reduced conversion efficiencyleadsto a reduced conversion efficiency
pits crystaloriginatedpits crystal
internal stressescauseinternal stresses
in the silicon substrate 10are causedin the silicon substrate 10
digital failuresmay causedigital failures
to the final fractureleadto the final fracture
impuritiescausingimpurities
from the generation of heatoriginatingfrom the generation of heat
from stressescausedfrom stresses
in a later stepcausedin a later step
the portion of film(passive) where ... are causedthe portion of film
to a dislocation effectleadto a dislocation effect
from the amorphous structureresultingfrom the amorphous structure
usuallycauseusually
the distortions(passive) caused bythe distortions
to residual stressleadingto residual stress
to white and 1 / f noiseleadto white and 1 / f noise