also(passive) is ... causedImperfection in crystal
by etching at the time of forming sidewall 44a or impurity doping to lower electrode 11(passive) is also causedImperfection in crystal
the etch process(passive) caused bycrystal faults
vacancies or altered crystalline structure due to off - stoichiometry(passive) caused bycrystal imperfections
Tl - substitution of Ca site(passive) is ... caused bycrystal imperfection
cosmic rayscreatecrystal imperfections
nm ... the presence of oxygen vacanciescausecrystal imperfections
Application of a high - energy electron beam to the surface of a crystal film being grown tendsto causeimperfections in the crystal
Creating [ fiber - optic cables ] in gravitycreatescrystal imperfections
The average thermal energy of a phonon at room temperature ... too smallto causeimperfections in the crystal
from the growth of laser material on silicon,’Liuresultingfrom the growth of laser material on silicon,’Liu
from the large ionic radius of chloride ionresultingfrom the large ionic radius of chloride ion
the space direction deviations(passive) caused bythe space direction deviations
in inhomogeneous material - related optical propertiesresultingin inhomogeneous material - related optical properties
a broadening of the rocking curvecausea broadening of the rocking curve
to branching in 12HSA fibresleadingto branching in 12HSA fibres
the presence of electrons in one energy level which can , by the action of light or radiation , be raised to a higher energy levelcausingthe presence of electrons in one energy level which can , by the action of light or radiation , be raised to a higher energy level