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ion - implantation damage(passive) are caused bythe crystal defects
Ge ion implantation(passive) caused bycrystal defects
the ion implantation to recover(passive) caused bycrystal defects
factors such as lattice mismatch(passive) caused bycrystal defects
high energy ion implantation(passive) created bycrystal defects
the ion implantation of operation 303(passive) caused bycrystal defects
the ion - implantation as already stated(passive) created bythe crystal defects
ion implantation ... as shown in FIG(passive) are created bycrystal defects
Problems ... the resulting lattice mismatchleadsto crystal defects
factors such as like lattice mismatch(passive) caused bycrystal defects
the ion implantation of the source and drain regions 18(passive) created bythe crystal defects
damages occurring upon ion implantation(passive) caused bycrystal defects
ion implantation for forming impurity layer(passive) caused bycrystal defects
ion implantation of group IV element(passive) caused bycrystal defects
an impurity ion implantation into an epitaxial layer or a semiconductor substrate(passive) caused bycrystal defects
ion implantation and obtain the desired diffusion profile(passive) caused bythe crystal defects
crystal damages in ion - implantation at high dose(passive) caused bycrystal defects
carrying out the ion implantation 14 b are removed(passive) created bythe crystal defects
high stress ... the siliconresultsin crystal defects
Concentration of stressmay causedefects in crystal
the film stress(passive) caused bycrystal defects
the stress ... it is possibleto preventthe crystal defects
the ion implantation during formation of the source / drain layers 12(passive) caused bycrystal defects
A P+ ion implantation process used in forming the P+ layer 42may causecrystal defects
for example , a well region formed in the substrate ... due to such ion implantation(passive) are ... causedcrystal defects
ion implantation or dry etching each time crystal defect is caused(passive) caused bycrystal defects
lattice mismatch ( Journal of Crystal Growth 150 ( 1995(passive) caused bycrystal defects
application of strain stress(passive) caused bycrystal defects
RTA performed after ion implantation for forming high - concentration impurity regions(passive) are ... caused bycrystal defects
thermal stress is produced within the siliconthereby causingcrystal defects
lattice mismatch between a well layer and a barrier layer in an active region(passive) caused bycrystal defects
ion implantation carried out for forming the impurity layer 4 can be more thoroughly removed by the trench 3(passive) caused bycrystal defects
the changes of internal stress(passive) caused bycrystal defects
lattice mismatch between the group - XIII and -XV semiconductor nanoparticle core and the first shell(passive) caused bycrystal defects
stress produced by the oxidation process(passive) caused bycrystal defects
a lattice mismatch and a thermal expansion coefficient difference between a substrate and a light emitting device on the substrate(passive) caused bycrystal defects
the ion implantation into a single crystal silicon layer 2 ' of reduced number of crystal defects(passive) created bycrystal defects
damage received at the time of high concentration ion implantation for forming the bottom electrode and without a decline in the reliability(passive) caused bycrystal defects
proton implantation(passive) caused bycrystal defects
ion implantation of p - type impurity and is doped all over its surface with ions of a p - type impurity ( B ) to form a channel region 72 of the n - channel MISFET(passive) are caused bythe crystal defects
from the ion implantation by the RTAresultingfrom the ion implantation by the RTA
in the semiconductor substrate by the ion - implantationcausedin the semiconductor substrate by the ion - implantation
from the RTA and remaining crystal defects resulting from the ion implantation left unrecoverable through the RTAresultingfrom the RTA and remaining crystal defects resulting from the ion implantation left unrecoverable through the RTA
in the silicon substrate 41 by ion - implantationcausedin the silicon substrate 41 by ion - implantation
from the ion implantation by the high - temperature heat treatment simultaneously with activation of the impurityresultingfrom the ion implantation by the high - temperature heat treatment simultaneously with activation of the impurity
by carrying out the ion implantation 14 a are removedcreatedby carrying out the ion implantation 14 a are removed
from the aforementioned ion implantation in the impurity regionresultingfrom the aforementioned ion implantation in the impurity region
in the surface layer portion by ion implantationare createdin the surface layer portion by ion implantation
by carrying out the ion implantation 14 b are removedcreatedby carrying out the ion implantation 14 b are removed
in the ion implantation steps for forming the extensions 19 etccausedin the ion implantation steps for forming the extensions 19 etc
from the ion implantation as a pre - step for the high - temperature heat treatment of RTAresultingfrom the ion implantation as a pre - step for the high - temperature heat treatment of RTA
from an ion implantation step for forming the source / drain regionresultingfrom an ion implantation step for forming the source / drain region
in a GaAs substrate to induce noise when ion implantation is performedare createdin a GaAs substrate to induce noise when ion implantation is performed
from the ion implantation for forming the high - concentration impurity regionresultingfrom the ion implantation for forming the high - concentration impurity region
from the high - temperature heat treatment and the remaining crystal defects resulting from the ion implantationresultingfrom the high - temperature heat treatment and the remaining crystal defects resulting from the ion implantation
from the ion implantation and activating the impurities implanted for forming the base regions 9resultingfrom the ion implantation and activating the impurities implanted for forming the base regions 9
generation of leakage current(passive) caused bygeneration of leakage current
from the ion implantation in addition to activation of the impurity by the first and second high - temperature heat treatmentsresultingfrom the ion implantation in addition to activation of the impurity by the first and second high - temperature heat treatments
the reverse leak current(passive) caused bythe reverse leak current
from the first and second high - temperature heat treatments and the remaining crystal defects resulting from the ion implantationresultingfrom the first and second high - temperature heat treatments and the remaining crystal defects resulting from the ion implantation
from the ion implantation in addition to activation of the impurity by the high - temperature heat treatment and to recover from remaining crystal defects resulting from the ion implantationresultingfrom the ion implantation in addition to activation of the impurity by the high - temperature heat treatment and to recover from remaining crystal defects resulting from the ion implantation
from RTA ( high - temperature heat treatmentresultingfrom RTA ( high - temperature heat treatment
from the first high - temperature heat treatmentresultingfrom the first high - temperature heat treatment
from the second high - temperature heat treatmentresultingfrom the second high - temperature heat treatment
from the high - temperature heat treatment by the low - temperature heat treatmentresultingfrom the high - temperature heat treatment by the low - temperature heat treatment
thus lower leakage current(passive) caused bythus lower leakage current
from the ion implantation and activating the phosphorus ions , the boron ions and the arsenic ions implanted for forming the impurity layer 3resultingfrom the ion implantation and activating the phosphorus ions , the boron ions and the arsenic ions implanted for forming the impurity layer 3
internal stress(passive) caused byinternal stress
to residual stressleadingto residual stress
from remarkable stressresultingfrom remarkable stress
the intrinsic base layer and leakage current(passive) caused bythe intrinsic base layer and leakage current
to electron trapping and gate leakage currentwill leadto electron trapping and gate leakage current
leakage current between the drain region and substrate 1causeleakage current between the drain region and substrate 1
from the ion implantation for forming the low - concentration impurity region by the first low - temperature heat treatment simultaneously with activation of the impurity in the low - concentration impurity regionresultingfrom the ion implantation for forming the low - concentration impurity region by the first low - temperature heat treatment simultaneously with activation of the impurity in the low - concentration impurity region
leakage of current between collector and base or between emitter and collectorcauseleakage of current between collector and base or between emitter and collector
the n - ch TFT for pixels leakage current(passive) caused bythe n - ch TFT for pixels leakage current
in temperature induced stressoriginatingin temperature induced stress
the effect of reducing the problems of the substrate surface in the first semiconductor layer such as crystal defects and leak current(passive) caused bythe effect of reducing the problems of the substrate surface in the first semiconductor layer such as crystal defects and leak current
at the time of crystal growth or crystal defects formed at the time of processing a wafer , which exist in the single crystal semiconductor substrate 101causedat the time of crystal growth or crystal defects formed at the time of processing a wafer , which exist in the single crystal semiconductor substrate 101
from a thermal stress inside the semiconductor substrate 1resultingfrom a thermal stress inside the semiconductor substrate 1