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the silicon oxide film 9 ... likelyto causemany crystal defects
the dislocation caused in the selective oxide film , or the silicon oxide film 9 ... likelyto causemany crystal defects
Very oftencausecrystal damage
by laser exposure of the samples(passive) caused bycrystal damage
I thinkcan ... causecrystal problems
of coursesetCrystal 's fault
the differencecausescrystal defects , etc
by the ion implantation process(passive) caused byrepair crystal defects
at which internal strain is increasedto causecrystal defects therein
crystal lattice spacing mismatch(passive) caused bysome crystal lattice defects
by the above ion irradiation(passive) caused bycontain crystal defects
trapsresultingfrom crystal lattice defects
Boundaries between the small and large particlesmay causedefects in the crystal lattice
Any disturbance at the liquid / solid interface , where the ingot is being createdwill causedefects in the crystal ( ingot
by equal channel angular pressing increase(passive) caused bycrystal lattice defects
problems in the growth processcausecrystal defects
at the time of crystal growth(passive) are causedcrystal defects
by heat history in the single - crystal growth(passive) caused bycrystal defects
by a metal contamination in a process(passive) caused bythe crystal defects
by high temperature Crystal defects(passive) caused byCrystal defects
by the changes of internal stress(passive) caused bycrystal defects
This processcausescrystal defects
Problems ... the resulting lattice mismatchleadsto crystal defects
the semiconductor materialcausingcrystal defects
on the semiconductor substrate surface(passive) may be causedCrystal defects
the factorscausingcrystal defects
processing damage during cutting or polishing(passive) caused bycrystal defects and defects
by the metal contamination(passive) caused bythe crystal defects
by oxygen deficiency(passive) caused bycrystal defects
by internal stress(passive) caused bycrystal defects
by the ion implantation damages(passive) caused bythe crystal defects
at which internal strain is increasedto causecrystal defects
oxygen atoms ... filmwhere ... are causedcrystal defects
by the stress(passive) caused bycrystal defects
by such stress(passive) caused bycrystal defects
by stress(passive) caused byCrystal defects
by stress generated at the boundaries between crystal regions(passive) caused bycrystal defects
by the ion implantation in the first(passive) caused bycrystal defects
other thingsto causedefects in the crystal
by conventional manufacturing methods(passive) caused bycrystal defects
substantial degradation of photoresponse performancecausesubstantial degradation of photoresponse performance
considerable degradation of photoresponse performancecauseconsiderable degradation of photoresponse performance
internal stressescauseinternal stresses
color changes in diamondscausecolor changes in diamonds
to the color changesledto the color changes
to loss in stabilityleadto loss in stability
the popcorn noise when the diode is substantially depletedto causethe popcorn noise when the diode is substantially depleted
electrical leakagecan causeelectrical leakage
the electrical behavior of the deviceinfluencesthe electrical behavior of the device
Natural Orange diamonds(passive) are caused byNatural Orange diamonds
rapid degradation of such devicescausesrapid degradation of such devices
Red Colors(passive) are caused byRed Colors
Red , Pink & Brown Colors(passive) are caused byRed , Pink & Brown Colors
Red , Pink & Brown Natural Fancy Colored Diamonds(passive) are caused byRed , Pink & Brown Natural Fancy Colored Diamonds
at the time of crystal growth or crystal defects formed at the time of processing a wafercausedat the time of crystal growth or crystal defects formed at the time of processing a wafer
various crystal defects at the time of processing a wafer , at the time of manufacturing an SOI substrate , and in a process of manufacturing a semiconductor devicecausevarious crystal defects at the time of processing a wafer , at the time of manufacturing an SOI substrate , and in a process of manufacturing a semiconductor device
each time(passive) is causedeach time
at the time of crystal growthare causedat the time of crystal growth
deterioration of the device or reduction in lifetimecausedeterioration of the device or reduction in lifetime
a reduction in breakdown voltagecausinga reduction in breakdown voltage
the strength of the material to be increasedcausethe strength of the material to be increased
to improved material performanceleadto improved material performance
a reduction in breakdown voltage ( seecausinga reduction in breakdown voltage ( see
in the single crystal semiconductorcausedin the single crystal semiconductor
from strainresultingfrom strain
at the time of crystal growth existare causedat the time of crystal growth exist
due to mechanical movementcauseddue to mechanical movement
an increase in leak current and a decrease in lifetime of a carriermay causean increase in leak current and a decrease in lifetime of a carrier
to local stress concentrationleadsto local stress concentration
Low crystalline structure(passive) caused byLow crystalline structure
a degradation in electronic propertiescausinga degradation in electronic properties
later due tocausedlater due to
as wellshould influenceas well
Pid of the shunting type pid - s , which is the most prevalent and most detrimental type of pid for crystalline silicon modules , was discovered(passive) to be caused byPid of the shunting type pid - s , which is the most prevalent and most detrimental type of pid for crystalline silicon modules , was discovered
optical propertyinfluencingoptical property
the colour of a structurecausingthe colour of a structure
in a semiconductor bodycausedin a semiconductor body
at a contact surfacecausedat a contact surface
deterioration of the devicecausedeterioration of the device
the device(passive) caused bythe device