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52929591 Multiple phonon processescontributingto inelastic scattering during thermal boundary conductance at solid interfaces
P. E. Multiple phonon processescontributingto inelastic scattering during thermal boundary conductance at solid interfaces
10.1103 / PhysRevB.84.125408 Multiple phonon processescontributingto inelastic scattering during thermal boundary conductance at solid interfaces
The existence of interfacial liquid structuring has demonstratedto influenceheat transfer across solid - liquid interfaces
termination conversionresultsin insulating properties of interfaces between polar perovskites and SrTiO3 thin films
Grain boundaries in polycrystalline conductors ... high defect concentrations9may causea large resistive barrier and hinder ion migration across the interface in materials with otherwise high bulk conductivity
detailed insights ... necessaryto designsolid interfaces with extreme values of thermal conductance for thermoelectricity and heat management applications
neither option ... as one is attemptingto createstrong adhesive interfaces between the materials with significantly different elastic and thermal properties
Furthermore , the two stable helium isotopes , 3He and 4He , have different quantum statistics , that is bosonic and fermionic , correspondinglyresultingin quite different properties of the liquid - solid interfaces as well as of the bulk phases
plagues by the relatively low ionic conductivity of solid electrolytes and large charge - transfer resistanceresultedfrom solid - solid interfaces between electrode materials and solid electrolytes
to a contrasting thermal conductivity enhancement in liquid and solid state of the nanocompositesleadsto a contrasting thermal conductivity enhancement in liquid and solid state of the nanocomposites
from the complex connections of boundaries / phase interfacesresultingfrom the complex connections of boundaries / phase interfaces
gaps of air or other materialcreatinggaps of air or other material
a depletion region in said semiconductor layer that substantially reduces majority carrier tunneling from the conduction band of said semiconductor layer and enhances minority carrier injection into said semiconductor layer and the resulting luminescenceto createa depletion region in said semiconductor layer that substantially reduces majority carrier tunneling from the conduction band of said semiconductor layer and enhances minority carrier injection into said semiconductor layer and the resulting luminescence
charge or emit EM radiationcreatecharge or emit EM radiation
to the failure of the entire devicecan ... leadto the failure of the entire device
crystal growth(passive) caused bycrystal growth
Incomplete premelting at the edges of monolayer colloidal crystals(passive) is triggered byIncomplete premelting at the edges of monolayer colloidal crystals
to films with optical band - gaps comparable to bulk crystalline TiO2 , and high photoactivities ... and ... 8) a novel route for production of stable TiO2–Ag nanocomposite suspensions and TiO2–Ag nanocomposite films was developedledto films with optical band - gaps comparable to bulk crystalline TiO2 , and high photoactivities ... and ... 8) a novel route for production of stable TiO2–Ag nanocomposite suspensions and TiO2–Ag nanocomposite films was developed
in angularly asymmetric , valley - dependent scatteringresultin angularly asymmetric , valley - dependent scattering