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by nitrogen(passive) caused bybrittleness ... in the blowing air,[31
for 5~20 seconds(passive) should be setannealing time
for softening the bigger size with high elongation and flash surface(passive) is designedAnnealing part
The presence of soluble saltscan causeblistering of a coating
so rapidto causeblistering of the coating
at 50 (passive) was setAnnealing temperature
The reasonsetannealing temperature
conventional primary ( discontinuous ) recrystallizationleadingto a rapid annealing softening
Optimalwill resultannealing temperatures
This furnace(passive) is designedAnnealing furnace
largely(passive) is causedInfill compaction
of four parts_Industry knowledge_Shenzhen Changlin Energy Saving Equipment Co.(passive) is mainly composedAnnealing furnace
exposure to actinic radiationwill ... causea " hardening " of the photoresist
by the telescope(passive) caused byPSF anisotropy
easily(passive) is causedAnnealing twinning
placeleadsto degassing during annealing
in 1983(passive) was inventedSimulated annealing
in 1983(passive) was invented Simulated annealing
in the mid 1980s(passive) was originally inventedSimulated Annealing
to solve combinatorial optimization problems of just this sort(passive) is designedSimulated annealing
a sinter sampleresultingfrom sintering of a glassy
any temperaturemight causeannealing
by heat(passive) caused byannealing
the step of heating ... high enoughto causeannealing
sufficientto causeannealing
high temperaturescan causeannealing
the metal ... long enoughto causeannealing
a metal ... sufficientto causeannealing
Repeated heating and hammeringresultedin annealing
primarily(passive) is ... influencedAnnealing
by the probe(passive) caused byannealing
soon(passive) was ... discoveredAnnealing
Microstructural changes of the films before and after in - situinfluenceannealing
The post - depositioncausedannealing
The undesirable blueshiftresultingfrom annealing
sufficient ... about 500 C.to causeannealing
To do this , the vacuum furnace 460 may , for instance , pressurize the mold 350 in a range between 297 psi to 376 psito causesintering of the SiCN
Accordingly , for the mold 450 comprising mixture 420 , the vacuum furnace 460 may apply an increased pressure to the mold 350to causesintering of the SiCN
Post - preparationleadsannealing
the temperature ... high enoughto causeannealing
the Simplicity theme(passive) designed bythe Simplicity theme
in a layer exchangeresultingin a layer exchange
in a phase transformation processresultedin a phase transformation process
to the formation of SeO2leadsto the formation of SeO2
deterioration in the magnetic properties(passive) is caused bydeterioration in the magnetic properties
the optical management without deteriorating electrical propertiesto designthe optical management without deteriorating electrical properties
substantial changeswill causesubstantial changes
to overcome local minima on the path of the global minimum region of the target functiondesignedto overcome local minima on the path of the global minimum region of the target function
the metal to form a smooth layer , with the crystal lattice structure being regular and uniformactually causesthe metal to form a smooth layer , with the crystal lattice structure being regular and uniform
in recrystallization and grain growth and decrease in hardness and tensile strengthresultedin recrystallization and grain growth and decrease in hardness and tensile strength
an increase in the size of metal grains in the grain structure of the wirecausesan increase in the size of metal grains in the grain structure of the wire
to increase in the ductility of the metalalso leadsto increase in the ductility of the metal
the structure to What is annealingcausesthe structure to What is annealing
to the formation of silver nanoparticles in the glass matrixleadsto the formation of silver nanoparticles in the glass matrix
the microstructure of the metal layercan influencethe microstructure of the metal layer
a decrease of the metal - graphene contact resistance for both Ni and Aucausesa decrease of the metal - graphene contact resistance for both Ni and Au
oxidation of the surface of the steelcausesoxidation of the surface of the steel
in recrystallization and grain growthresultedin recrystallization and grain growth
the changes in atomic structure(passive) caused bythe changes in atomic structure
to grain growthleadingto grain growth
to diffuse between the first semiconductor region and the second semiconductor layerto causeto diffuse between the first semiconductor region and the second semiconductor layer
the Ni of the layerto causethe Ni of the layer
the structure to How to Anneal Coppercausesthe structure to How to Anneal Copper
to an increase in .leadsto an increase in .
in crystallization of the filmsresultedin crystallization of the films
in an improved lattice crystalline qualityresultedin an improved lattice crystalline quality
the metal to react with underlying siliconto causethe metal to react with underlying silicon
the structure tocausesthe structure to
to an increase in alleadsto an increase in al
a degradation of the materialcausinga degradation of the material
diffusion between layerscould causediffusion between layers
grain coarsening as well as loss of the continuous interface between the individual layers when the Pt thickness was less than 35 nmcausedgrain coarsening as well as loss of the continuous interface between the individual layers when the Pt thickness was less than 35 nm
to a higher thermal stabilityleadsto a higher thermal stability
the Mo to completely react with the amorphous silicon layer to form MoSi2 , which is highly uniform and is virtually a single crystalcausesthe Mo to completely react with the amorphous silicon layer to form MoSi2 , which is highly uniform and is virtually a single crystal
grain growth of the RbSn2F5 crystallitescausedgrain growth of the RbSn2F5 crystallites
in the resistance valueresultingin the resistance value
the hardness to dropcausingthe hardness to drop
oxygen atomscausesoxygen atoms
recrystallization of the substratecausesrecrystallization of the substrate
hydrogen atomscauseshydrogen atoms